Circularly polarized lasing in a (110)-oriented quantum well vertical-cavity surface-emitting laser under optical spin injection

被引:51
作者
Fujino, Hiroshi [1 ]
Koh, Shinji [1 ]
Iba, Satoshi [1 ]
Fujimoto, Toshiyasu [1 ]
Kawaguchi, Hitoshi [1 ]
机构
[1] Nara Inst Sci & Technol, Grad Sch Mat Sci, Nara 6300192, Japan
基金
日本学术振兴会;
关键词
gallium arsenide; III-V semiconductors; indium compounds; paramagnetic resonance; quantum well lasers; surface emitting lasers; RELAXATION; GAAS(110);
D O I
10.1063/1.3112576
中图分类号
O59 [应用物理学];
学科分类号
摘要
We fabricated and characterized a vertical-cavity surface-emitting laser (VCSEL) based on (110) InGaAs/GaAs multiple quantum wells (MQWs). Circularly polarized lasing in the (110) VCSEL by optical injection of spin-polarized electrons has been demonstrated at 77 K and room temperature. A high degree of circular polarization, 0.94, was observed at 77 K, reflecting the long electron spin relaxation time in the (110) MQWs.
引用
收藏
页数:3
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