Relation between plasma parameters and film properties in DC reactive magnetron sputtering of indium-tin-oxide

被引：10

作者：

Matsuda, Y

Yamori, Y

Muta, M

Ohgushi, S

Fujiyama, H

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1997年 / 36卷 / 7B期

关键词：

reactive sputtering; magnetron; indium tin oxide; LIF; optical emission; oxygen addition;

D O I：

10.1143/JJAP.36.4922

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The de magnetron sputtering process of an indium-tin-oxide (ITO) target in Ar/O-2 is studied. Experimental results from laser induced fluorescence measurements of sputtered indium atoms, optical emission measurements oi various atomic and molecular species in the excited states, probe measurements of plasma ion density and potential, and measurements of deposited film properties (transmittance, resistivity and deposition rate) are reported. Effects of the preset pressure of introduced O-2 On these parameters are investigated over a wide range of preset pressures.

引用

页码：4922 / 4927

页数：6

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