LASER-INDUCED FLUORESCENCE OBSERVATION OF IN-ATOMS PRODUCED BY DC REACTIVE SPUTTERING OF INDIUM-TIN-OXIDE TARGET

被引:9
作者
MATSUDA, Y
KIDO, T
ANO, K
SHIRAKATA, K
FUJIYAMA, H
机构
[1] Department of Electrical Engineering and Computer Science, Nagasaki University
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1994年 / 33卷 / 7B期
关键词
LASER-INDUCED FLUORESCENCE; INDIUM ATOM; REACTIVE SPUTTERING; ITO; RAYLEIGH SCATTERING; ABSOLUTE DENSITY;
D O I
10.1143/JJAP.33.4469
中图分类号
O59 [应用物理学];
学科分类号
摘要
Spatial density profiles of sputtered In-atoms in a de glow discharge with an indium-tin-oxide (ITO) cathode were measured by laser-induced fluorescence (LIF) spectroscopy. The absolute density of In-atoms was obtained by calibrating the LIF signal with the Rayleigh scattering signal for Ar. The spatial density profile of In-atoms had a peak at a certain distance from the cathode, and this peak density was about 10(11) cm(-3) for pure Ar de discharge at 0.2 Torr and 0.6 Wcm(-2) The behavior of spatial profiles of the absolute In-density was investigated as a function of de discharge power, total pressure (Ar+O-2), and O-2 partial pressure. Addition of a small amount of O-2 caused a drastic change in both the absolute In-density and its spatial distribution. From these observations, the reactive sputtering mechanism in a de glow discharge is discussed.
引用
收藏
页码:4469 / 4472
页数:4
相关论文
共 15 条
[1]   EFFECTS OF RESIDUAL GASES AND RF POWER ON ITO RF-SPUTTERED THIN-FILMS [J].
CLEMENT, M ;
SANTAMARIA, J ;
IBORRA, E ;
GONZALEZDIAZ, G .
VACUUM, 1987, 37 (5-6) :447-449
[2]  
DESILVA AW, 1970, METHOD EXPT PHYSCIS, V9, P107
[3]   LASER FLUORESCENCE MEASUREMENTS OF THE FLUX-DENSITY OF TITANIUM SPUTTERED FROM AN OXYGEN COVERED SURFACE [J].
DULLNI, E .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1985, 38 (02) :131-138
[4]   EFFECTS OF ANISOTROPIC EXCITATION IN LASER-INDUCED FLUORESCENCE SPECTROSCOPY (LIFS) [J].
FUJIMOTO, T ;
GOTO, C ;
UETANI, Y ;
FUKUDA, K .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1985, 24 (07) :875-880
[5]   CARBON-TETRACHLORIDE PLASMA-ETCHING OF GAAS AND INP - A KINETIC-STUDY UTILIZING NONPERTURBATIVE OPTICAL TECHNIQUES [J].
GOTTSCHO, RA ;
SMOLINSKY, G ;
BURTON, RH .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (08) :5908-5919
[6]   ABSOLUTE DENSITY-MEASUREMENT OF METAL ATOMS BY LASER RESONANCE SCATTERING WITH THE AID OF RAYLEIGH-SCATTERING [J].
HAMAMOTO, M ;
MAEDA, M ;
MURAOKA, K ;
AKAZAKI, M .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (09) :1709-1713
[7]   BAND-GAP WIDENING IN HEAVILY SN-DOPED IN2O3 [J].
HAMBERG, I ;
GRANQVIST, CG ;
BERGGREN, KF ;
SERNELIUS, BE ;
ENGSTROM, L .
PHYSICAL REVIEW B, 1984, 30 (06) :3240-3249
[8]   ELECTRICAL-PROPERTIES OF INDIUM-TIN-OXIDE SINGLE-CRYSTALS [J].
KANAI, Y .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (01) :L12-L14
[9]   EFFECT OF CHEMICAL-STATE OF DOPED SN ON THE ELECTRICAL-PROPERTIES OF SPUTTERED ITO FILMS [J].
KANAZAWA, J ;
HARANOH, T ;
MATSUMOTO, K .
VACUUM, 1990, 41 (4-6) :1463-1465
[10]   TRANSIENT CHANGE IN THE VELOCITY DISTRIBUTION-FUNCTIONS OF SPUTTERED ATOMS DURING INITIAL DOSE IN ION-BEAM BOMBARDMENT [J].
MATSUDA, Y ;
HONDA, C ;
MATSUBAGUCHI, S ;
MOROISHI, T ;
MURAOKA, K ;
MAEDA, M ;
AKAZAKI, M .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (03) :L182-L184