PROCESS MODELING OF REACTIVE SPUTTERING

被引：94

作者：

BERG, S ^{[1
]}

BLOM, HO ^{[1
]}

MORADI, M ^{[1
]}

NENDER, C ^{[1
]}

LARSSON, T ^{[1
]}

机构：

[1] ERICSSON COMPONENTS AB,S-16381 KISTA STOCKHOLM,SWEDEN

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1989年 / 7卷 / 03期

关键词：

D O I：

10.1116/1.576259

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：1225 / 1229

页数：5

共 14 条

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[6]

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[7] GLOW-DISCHARGE OPTICAL SPECTROSCOPY FOR MONITORING SPUTTER DEPOSITED FILM THICKNESS [J].

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[8] PARTIAL-PRESSURE CONTROL OF REACTIVELY SPUTTERED TITANIUM NITRIDE [J].

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[9] A PHYSICAL MODEL FOR ELIMINATING INSTABILITIES IN REACTIVE SPUTTERING [J].

LARSSON, T ;

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BERG, S .

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[10]

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