Quantitative analysis of the polarization fields and absorption changes in InGaN/GaN quantum wells with electroabsorption spectroscopy

被引：115

作者：

Renner, F

Kiesel, P

Döhler, GH

Kneissl, M

Van de Walle, CG

Johnson, NM

机构：

[1] Univ Erlangen Nurnberg, D-91058 Erlangen, Germany

[2] Palo Alto Res Ctr Inc, Palo Alto, CA 94304 USA

来源：

APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 03期

关键词：

D O I：

10.1063/1.1493229

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Electroabsorption measurements are reported for wurtzite InGaN/GaN quantum wells. The electroabsorption technique allows exact quantitative analysis of absorption and absorption changes in InGaN quantum wells and barrier layers, with recorded field-induced absorption changes as large as 7000 cm(-1) below and almost 20000 cm(-1) above the band edge. The technique thus allows precise determination of the strong internal fields that originate from strain-induced polarization and differences in spontaneous polarization. The fields measured on functioning diodes vary between 1.1 and 1.4 MV/cm for indium concentrations in InGaN quantum wells ranging from 7% to 9%. (C) 2002 American Institute of Physics.

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页码：490 / 492

页数：3

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