A dynamic Monte Carlo study of the in situ growth of a substance deposited using electron-beam-induced deposition

被引：16

作者：

Liu, Zhi-Quan ^{[1
]}

Mitsuishi, Kazutaka ^{[1
]}

Furuya, Kazuo ^{[1
]}

机构：

[1] Natl Inst Mat Sci, High Voltage Electron Microscopy Stn, Tsukuba, Ibaraki, Japan

来源：

NANOTECHNOLOGY | 2006年 / 17卷 / 15期

关键词：

D O I：

10.1088/0957-4484/17/15/038

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The in situ growth of a deposit in electron-beam-induced deposition (EBID) was studied by dynamic Monte Carlo simulation, showing first the preferential growth of deposit along the incident direction of the electron beam. The effects of electron energy, probe size, substrate thickness, and deposit (or substrate) composition on EBID were investigated and discussed, considering the electron scattering of not only secondary electrons but also primary and backscattered electrons in solids. By including the depositions at not only the top but also the bottom surfaces of the substrate, the growth model of the deposit in EBID was modified. Concerning the resolution of EBID, a small lateral size can be achieved on the deposit (or substrate) containing light atoms using a high-energy electron beam with a fine probe size.

引用

页码：3832 / 3837

页数：6

共 21 条

[1] MONTE-CARLO CALCULATION OF LOW-ENERGY ELECTRON-EMISSION FROM SURFACES [J].

ALLEN, TE ;

KUNZ, RR ;

MAYER, TM .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (06) :2057-2060

[2] Influence of process variables on electron beam chemical vapor deposition of platinum [J].

Beaulieu, D ;

Ding, Y ;

Wang, ZL ;

Lackey, WJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2005, 23 (05) :2151-2159

[3] Submicrometer Hall devices fabricated by focused electron-beam-induced deposition [J].

Boero, G ;

Utke, I ;

Bret, T ;

Quack, N ;

Todorova, M ;

Mouaziz, S ;

Kejik, P ;

Brugger, J ;

Popovic, RS ;

Hoffmann, P .

APPLIED PHYSICS LETTERS, 2005, 86 (04) :042503-1

[4] Influence of the beam scan direction during focused electron beam induced deposition of 3D nanostructures [J].

Bret, T ;

Utke, I ;

Hoffmann, P .

MICROELECTRONIC ENGINEERING, 2005, 78-79 :307-313

[5] Electron interactions with CF4 [J].

Christophorou, LG ;

Olthoff, JK ;

Rao, MVVS .

JOURNAL OF PHYSICAL AND CHEMICAL REFERENCE DATA, 1996, 25 (05) :1341-1388

[6] Synthesis of uniform GaN quantum dot arrays via electron nanolithography of D2GaN3 [J].

Crozier, PA ;

Tolle, J ;

Kouvetakis, J ;

Ritter, C .

APPLIED PHYSICS LETTERS, 2004, 84 (18) :3441-3443

[7] MONTE-CARLO SIMULATION OF BACKSCATTERED ELECTRONS AND ENERGY FROM THICK TARGETS AND SURFACE-FILMS [J].

DAPOR, M .

PHYSICAL REVIEW B, 1992, 46 (02) :618-625

[8] Mechanics of hydrogenated amorphous carbon deposits from electron-beam-induced deposition of a paraffin precursor [J].

Ding, W ;

Dikin, DA ;

Chen, X ;

Piner, RD ;

Ruoff, RS ;

Zussman, E ;

Wang, X ;

Li, X .

JOURNAL OF APPLIED PHYSICS, 2005, 98 (01)

[9] Monte Carlo simulation study of reflection-electron-energy-loss-spectroscopy spectrum [J].

Ding, ZJ ;

Shimizu, R .

PHYSICAL REVIEW B, 2000, 61 (20) :14128-14135

[10] Growth and simulation of high-aspect ratio nanopillars by primary and secondary electron-induced deposition [J].

Fowlkes, JD ;

Randolph, SJ ;

Rack, PD .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2005, 23 (06) :2825-2832

← 1 2 3 →