The use of transparent conducting indium-zinc oxide film as a current spreading layer for vertical-structured high-power GaN-based light-emitting diodes

被引:17
作者
Wang, SJ [1 ]
Chen, SL
Uang, KM
Lee, WC
Chen, TM
Chen, CH
Liou, BW
机构
[1] Natl Cheng Kung Univ, Dept Elect Engn, Inst Microelect, Tainan 701, Taiwan
[2] Wu Feng Inst Technol, Dept Elect Engn, Chiayi 621, Taiwan
[3] Wu Feng Inst Technol, Dept Comp Sci & Informat Engn, Chiayi 621, Taiwan
关键词
circular transmission line model; electroplating; GaN; indium-zinc oxide (IZO); laser liftoff (LLO); light-emitting diodes (LEDs);
D O I
10.1109/LPT.2006.873338
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this study, the performance of vertical-structured high-power GaN-based light-emitting diodes (VM-LEDs) with a transparent and low-resistant indium-zinc oxide (IZO) film as a current spreading layer (CSL) was investigated. Nickel electroplating and patterned laser liftoff techniques were employed for the transfer of sapphire substrate to nickel substrate. The novel IZO CSL atop n-side-up VM-LEDs offering benefits of superior current spreading ability, larger extraction efficiency, and lower forward voltage drop was demonstrated. As compared to the regular LED without IZO CSL, the use of an IZO CSL with an optimum thickness of around 300 nm leads to an increase in light output power by 97.1 (67.8)% and a decrease in forward voltage drop by 4.9 (15.5)% under an injection current of 350 (800) mA.
引用
收藏
页码:1146 / 1148
页数:3
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