80 GHz field-effect transistors produced using high purity semiconducting single-walled carbon nanotubes

被引：145

作者：

Nougaret, L. ^{[1
]}

Happy, H. ^{[1
]}

Dambrine, G. ^{[1
]}

Derycke, V. ^{[2
]}

Bourgoin, J. -P. ^{[2
]}

Green, A. A. ^{[3
,4
]}

Hersam, M. C. ^{[3
,4
]}

机构：

[1] CNRS, UMR 8520, Inst Elect Microelect & Nanotechnol, F-59652 Villeneuve Dascq, France

[2] IRAMIS, CEA, CNRS, Lab Elect Mol,Serv Phys Etat Condense,URA 2464, F-91191 Gif Sur Yvette, France

[3] Northwestern Univ, Dept Mat Sci & Engn, Evanston, IL 60208 USA

[4] Northwestern Univ, Dept Chem, Evanston, IL 60208 USA

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 24期

关键词：

carbon nanotubes; electrophoresis; field effect transistors; nanotechnology; semiconductor nanotubes; surface chemistry;

D O I：

10.1063/1.3155212

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This paper presents the high frequency performance of single-walled carbon nanotube (SWNT) field-effect transistors, with channel consisting of dense networks of high purity semiconducting SWNTs. Using SWNT samples containing 99% pure semiconducting SWNTs, we achieved operating frequencies above 80 GHz. This record frequency does not require aligned SWNTs, thus demonstrating the remarkable potential of random networks of sorted SWNTs for high frequency electronics.

引用

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