An 8-GHz ft carbon nanotube field-effect transistor for gigahertz range applications

被引：46

作者：

Bethoux, J. -M. ^{[1
]}

Happy, H.

Dambrine, G.

Derycke, V.

Goffman, M.

Bourgoin, J. -P.

机构：

[1] CNRS, UMR 8520, Inst Elect Microelect & Nanotechnol, F-59652 Villeneuve Dascq, France

[2] CEA Saclay, SPEC, DRECAM,Lab Elect Mol, DSM,CNRS URA 2464,Serv Phys Etat Condense, F-91191 Gif Sur Yvette, France

来源：

IEEE ELECTRON DEVICE LETTERS | 2006年 / 27卷 / 08期

关键词：

carbon nanotube field-effect transistor; (CNFET); gigahertz; high frequency (HF);

D O I：

10.1109/LED.2006.879042

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, the authors report on the high-frequency (RF) performance of self-assembled carbon nanotube field-effect transistors. HF device structures including a large number of singlewall carbon nanotubes; have been designed and optimized in order to establish a new state of the art. The device exhibits a current gain (vertical bar H-21 vertical bar(2)) cutoff frequency (f(t)) of 8 GHz and a maximum stable gain value of 10 dB at 1 GHz, after de-embedding the access pads. Considering such results, nanotube-based circuits with gigahertz performance are now conceivable.

引用

页码：681 / 683

页数：3

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