Rapid growth of thick ZnO films with room-temperature ultraviolet emission by means of atmospheric pressure halide vapor-phase epitaxy

被引：14

作者：

Takahashi, N

Makino, M

Nakamura, T

Yamamoto, H

机构：

[1] Shizuoka Univ, Dept Mat Sci & Technol, Fac Engn, Hamamatsu, Shizuoka 4328561, Japan

[2] Tokyo Univ Technol, Dept Engn, Hachioji, Tokyo 1928580, Japan

来源：

CHEMISTRY OF MATERIALS | 2002年 / 14卷 / 09期

关键词：

D O I：

10.1021/cm0203520

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Thick ZnO film growth on a sapphire (0001) surface has been examined by means of atmospheric pressure halide vapor-phase epitaxy (AP-HVPE), aiming at homoepitaxial growth of the light-emitting layers of a laser and light-emitting diodes to improve their quality. It was found that the AP-HVPE method is very useful for thick-layer ZnO growth because the observed growth rate reached 100 mum/h. The surface of D-A pair ZnO deposited onto a sapphire substrate at 1023 K was smooth and free from cracks. The photoluminescence spectra showed a strong ultraviolet emission centered at 381.0 nm at room temperature.

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页码：3622 / +

页数：4

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