Characterization of 4H-SiC gate turn-off thyristor

被引：14

作者：

Cao, LH ^{[1
]}

Li, BH ^{[1
]}

Zhao, JH ^{[1
]}

机构：

[1] Rutgers State Univ, SICLAB, Dept Elect & Comp Engn, Piscataway, NJ 08854 USA

来源：

SOLID-STATE ELECTRONICS | 2000年 / 44卷 / 02期

关键词：

D O I：

10.1016/S0038-1101(99)00241-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An 800 V 4H-SiC gate turn-off thyristor (GTO) is fabricated and characterized. The switching characteristics of the SiC GTO investigated over a temperature range from 25 degrees C to 240 degrees C will be presented with a switched current density through anode contact up to 10,000 A/cm(2). The turn-on and turn-off times as well as the minority electron lifetime in the p-base region will also be reported as a function of temperature. The high current density capability of the GTO is consistent with the observed reproducible avalanche characteristics of the GTO's anode p(+)n diode. The maximum controllable current decreases with increasing temperature as a result of carrier mobility degradation. (C) 2000 Elsevier Science Ltd. All rights reserved.

引用

页码：347 / 352

页数：6

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