Blue-green laser diode grown by photo-assisted MOCVD

被引：30

作者：

Toda, A

Nakamura, F

Yanashima, K

Ishibashi, A

机构：

[1] Sony Corporation Research Center, Yokohama 240, 174 Fujitsuka-cho, Hodogaya-ku

来源：

JOURNAL OF CRYSTAL GROWTH | 1997年 / 170卷 / 1-4期

关键词：

CHEMICAL-VAPOR-DEPOSITION; NITROGEN-DOPED ZNSE; ROOM-TEMPERATURE; EPITAXIAL-GROWTH; PHASE EPITAXY; ZNMGSSE; LAYERS;

D O I：

10.1016/S0022-0248(96)00631-8

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Operation of the first blue-green laser diode grown by metalorganic chemical vapor deposition has been demonstrated at 77 K under pulsed current injection. The precursors were dimethylzinc, dimethylcadmium, diethylsulfide, bismethyl-cyclopentadienyl-magnesium, and dimethylselenide. Diisopropylamine and ethyliodide were used for a p-type and n-type doping under irradiation with ultraviolet light generated by a high-pressure mercury lamp, respectively. A 1 x 10(18) cm(-3) nitrogen-atom concentration, which was measured by secondary ion mass spectroscopy, was obtained in the p-ZnSe contact layer. The 4.2 K photoluminescence spectrum was dominated by strong donor-acceptor pair emission and the net acceptor concentration was 1.4 x 10(16) cm(-3).

引用

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页码：461 / 466

页数：6

相关论文

共 12 条

[1] PHOTO-ASSISTED METALORGANIC VAPOR-PHASE EPITAXY FOR NITROGEN DOPING AND FABRICATION OF BLUE-GREEN LIGHT-EMITTING DEVICES OF ZNSE-BASED SEMICONDUCTORS [J].

FUJITA, S ;

ASANO, T ;

MAEHARA, K ;

TOJYO, T ;

FUJITA, S .

JOURNAL OF CRYSTAL GROWTH, 1994, 138 (1-4) :737-744

[2] GROWTH OF NITROGEN-DOPED ZNSE AND INHIBITION OF HYDROGEN PASSIVATION OF NITROGEN ACCEPTOR BY PHOTOASSISTED METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION [J].

FUJITA, Y ;

TERADA, T ;

SUZUKI, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1995, 34 (8B) :L1034-L1036

[3] BLUE-GREEN INJECTION-LASERS CONTAINING PSEUDOMORPHIC ZN1-XMGXSYSE1-Y CLADDING LAYERS AND OPERATING UP TO 394-K [J].

GAINES, JM ;

DRENTEN, RR ;

HABERERN, KW ;

MARSHALL, T ;

MENSZ, P ;

PETRUZZELLO, J .

APPLIED PHYSICS LETTERS, 1993, 62 (20) :2462-2464

[4] BLUE-GREEN LASER-DIODES [J].

HAASE, MA ;

QIU, J ;

DEPUYDT, JM ;

CHENG, H .

APPLIED PHYSICS LETTERS, 1991, 59 (11) :1272-1274

[5] ORIGIN OF THE LOW DOPING EFFICIENCY OF NITROGEN ACCEPTORS IN ZNSE GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION [J].

KAMATA, A ;

MITSUHASHI, H ;

FUJITA, H .

APPLIED PHYSICS LETTERS, 1993, 63 (24) :3353-3354

[6] ROOM-TEMPERATURE CONTINUOUS OPERATION OF BLUE-GREEN LASER-DIODES [J].

NAKAYAMA, N ;

ITOH, S ;

OHATA, T ;

NAKANO, K ;

OKUYAMA, H ;

OZAWA, M ;

ISHIBASHI, A ;

IKEDA, M ;

MORI, Y .

ELECTRONICS LETTERS, 1993, 29 (16) :1488-1489

[7] EPITAXIAL-GROWTH OF P-TYPE ZNMGSSE [J].

OKUYAMA, H ;

KISHITA, Y ;

MIYAJIMA, T ;

ISHIBASHI, A ;

AKIMOTO, K .

APPLIED PHYSICS LETTERS, 1994, 64 (07) :904-906

[8] CONTINUOUS-WAVE, ROOM-TEMPERATURE, RIDGE-WAVE-GUIDE GREEN-BLUE DIODE-LASER [J].

SALOKATVE, A ;

JEON, H ;

DING, J ;

HOVINEN, M ;

NURMIKKO, AV ;

GRILLO, DC ;

HE, L ;

HAN, J ;

FAN, Y ;

RINGLE, M ;

GUNSHOR, RL ;

HUA, GC ;

OTSUKA, N .

ELECTRONICS LETTERS, 1993, 29 (25) :2192-2194

[9] NOVEL TECHNIQUE FOR P-TYPE NITROGEN DOPED ZNSE EPITAXIAL LAYERS [J].

TASKAR, NR ;

KHAN, BA ;

DORMAN, DR ;

SHAHZAD, K .

APPLIED PHYSICS LETTERS, 1993, 62 (03) :270-272

[10] EPITAXIAL-GROWTH OF ZNMGSSE ON GAAS SUBSTRATE BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION [J].

TODA, A ;

ASANO, T ;

FUNATO, K ;

NAKAMURA, F ;

MORI, Y .

JOURNAL OF CRYSTAL GROWTH, 1994, 145 (1-4) :537-540