Large area pulsed laser deposition of aurivillius-type layered perovskite thin films

被引：12

作者：

Pignolet, A ^{[1
]}

Welke, S ^{[1
]}

Curran, C ^{[1
]}

Alexe, M ^{[1
]}

Senz, S ^{[1
]}

Hesse, D ^{[1
]}

机构：

[1] INST PHYS & TECHNOL MAT,R-76900 BUCHAREST,ROMANIA

来源：

FERROELECTRICS | 1997年 / 202卷 / 1-4期

关键词：

D O I：

10.1080/00150199708213487

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Thin films of Aurivillius-type layered perovskites of Bi4Ti3O12 and SrBi2Ta2O9 have been epitaxially deposited by PLD on SrTiO3 single crystal substrates. Bi4Ti3O12 has been deposited as well on a CeO2/YSZ/Si(100) buffer layer, and on Pt-coated oxidized silicon for electrical measurements. Using a new technique for large area PLD, Bi4Ti3O12 has also been deposited on a whole (100)-oriented 3 '' Si wafer. The obtained films have a homogeneous thickness over the whole wafer corresponding to an area of about 45 cm(2). The composition, structure, and electrical properties of the films are presented.

引用

页码：285 / 298

页数：14

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