Influence of separate confinement heterostructure on emission bandwidth of InGaAsP superluminescent diodes/semiconductor optical amplifiers with nonidentical multiple quantum wells

被引：17

作者：

Lin, CF ^{[1
]}

Su, YS

Wu, CH

Shmavonyan, GS

机构：

[1] Natl Taiwan Univ, Grad Inst Electroopt Engn, Taipei 106, Taiwan

[2] Natl Taiwan Univ, Dept Elect Engn, Taipei 106, Taiwan

[3] Natl Taiwan Univ, Grad Inst Elect Engn, Taipei 106, Taiwan

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2004年 / 16卷 / 06期

关键词：

terms-carrier transport; emission spectrum; nonuniform carrier distribution; semiconductor optical amplifier (SOA); separate confinement heterostructure (SCH); superluminescent diode (SLD);

D O I：

10.1109/LPT.2004.827119

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Experiments show that the layer of separate confinement heterostructure (SCH) has a significant influence on the emission spectrum of superluminescent diodes (SLDs)/semiconductor optical amplifiers (SOAs). Reducing the thickness of SCH layer at the p-side could improve the uniformity of carrier distribution among multiple quantum wells (MQWs). With three In0.67Ga0.33As0.72P0.28 QWs near the p-side and two In0.53Ga0.47As QWs near the n-side, when the thickness of the SCH layer changes from 120 to 30 run, the operation current for SLDs/SOAs to exhibit the full-width at half-maximum spectral width of above 270 nm could be reduced from 500 to 160 mA.

引用

页码：1441 / 1443

页数：3

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