Fabrication of ultra-short T gates by a two-step electron beam lithography process

被引：13

作者：

Chen, YF ^{[1
]}

Peng, KW

Cui, Z

机构：

[1] Rutherford Appleton Lab, Didcot OX11 0QX, Oxon, England

[2] Chinese Acad Sci, Inst Elect Engn, Beijing 100080, Peoples R China

来源：

MICROELECTRONIC ENGINEERING | 2004年 / 73-4卷

关键词：

electron beam lithography; T gate; LOR; PMMA; UVIII; forward scattering; Monte Carlo simulation;

D O I：

10.1016/j.mee.2004.03.010

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper proposes a two-step electron beam lithography process, i.e., exposing feet and heads in two separate steps for ultra-short T gates, using a PMMA/UNIII resist stack separated by a thin lift off resist (LOR) layer. Results from both experiments and Monte Carlo simulations show that the two-step lithography process has advantages over the traditional one-step process of being able to pattern shorter feet with a much thicker top layer. The optimum thickness of the LOR for patterning T shape profiles in the PMMA/UVIII resist stack has been found to be about 20 nm. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：662 / 665

页数：4

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