学术探索
学术期刊
新闻热点
数据分析
智能评审

Magnetic anisotropy of Ga1-xMnxAs thin films on GaAs (311)A probed by ferromagnetic resonance

被引：28
作者：
Bihler, C.
Huebl, H.
Brandt, M. S.
Goennenwein, S. T. B.
Reinwald, M.
Wurstbauer, U.
Doeppe, M.
Weiss, D.
Wegscheider, W.
机构：
[1] Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, Germany
[2] Bayer Akad Wissensch, Walther Meissner Inst Tieftemp Forsch, D-85748 Garching, Germany
[3] Univ Regensburg, D-93040 Regensburg, Germany
来源：
APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 01期
关键词：
D O I：
10.1063/1.2219408
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have studied the magnetic anisotropy of Ga1-xMnxAs thin films grown by low-temperature molecular beam epitaxy on GaAs (311)A substrates by means of ferromagnetic resonance spectroscopy. The angular dependence of the ferromagnetic resonance fields observed can be explained by two main contributions to the magnetic anisotropy: a cubic magnetic anisotropy field oriented along the crystallographic < 001 > axes caused by the symmetry of the GaAs host lattice, and an effective uniaxial magnetic anisotropy field along [311] presumably caused by the homoepitaxial growth of the layer. Additional smaller magnetic anisotropy contributions are discussed. Consequently, the dominating magnetic anisotropy of Ga1-xMnxAs on GaAs (311)A substrate appears to have the same origin as on GaAs (100) substrate. (c) 2006 American Institute of Physics.
引用
收藏
页数：3
相关论文
共 15 条
[1]   Theory of magnetic anisotropy in III1-xMnxV ferromagnets -: art. no. 054418 [J].
Abolfath, M ;
Jungwirth, T ;
Brum, J ;
MacDonald, AH .
PHYSICAL REVIEW B, 2001, 63 (05)
[2]   Hole-mediated ferromagnetism in tetrahedrally coordinated semiconductors [J].
Dietl, T ;
Ohno, H ;
Matsukura, F .
PHYSICAL REVIEW B, 2001, 63 (19)
[3]   Hall effect and hole densities in Ga1-xMnxAs [J].
Edmonds, KW ;
Wang, KY ;
Campion, RP ;
Neumann, AC ;
Foxon, CT ;
Gallagher, BL ;
Main, PC .
APPLIED PHYSICS LETTERS, 2002, 81 (16) :3010-3012
[4]  
Furdyna JK, 2004, ADV SOLID STATE PHYS, V44, P515
[5]   Ferromagnetic resonance study of the free-hole contribution to magnetization and magnetic anisotropy in modulation-doped Ga1-xMnxAs/Ga1-yAlyAs:Be -: art. no. 035307 [J].
Liu, X ;
Lim, WL ;
Dobrowolska, M ;
Furdyna, JK ;
Wojtowicz, T .
PHYSICAL REVIEW B, 2005, 71 (03)
[6]   Ferromagnetic resonance in Ga1-xMnxAs:: Effects of magnetic anisotropy -: art. no. 205204 [J].
Liu, X ;
Sasaki, Y ;
Furdyna, JK .
PHYSICAL REVIEW B, 2003, 67 (20)
[7]   Making nonmagnetic semiconductors ferromagnetic [J].
Ohno, H .
SCIENCE, 1998, 281 (5379) :951-956
[8]   Magnetotransport properties of (Ga,Mn)As grown on GaAs(411)A substrates [J].
Omiya, T ;
Matsukura, F ;
Shen, A ;
Ohno, Y ;
Ohno, H .
PHYSICA E, 2001, 10 (1-3) :206-209
[9]   Growth of (Ga,Mn)As on GaAs(001) and (311)A in a high-mobility MBE system [J].
Reinwald, M ;
Wurstbauer, U ;
Döppe, M ;
Kipferl, W ;
Wagenhuber, K ;
Tranitz, HP ;
Weiss, D ;
Wegscheider, W .
JOURNAL OF CRYSTAL GROWTH, 2005, 278 (1-4) :690-694
[10]   Temperature dependent magnetic anisotropy in (Ga,Mn)As layers [J].
Sawicki, M ;
Matsukura, F ;
Idziaszek, A ;
Dietl, T ;
Schott, GM ;
Ruester, C ;
Gould, C ;
Karczewski, G ;
Schmidt, G ;
Molenkamp, LW .
PHYSICAL REVIEW B, 2004, 70 (24) :1-6
12