Dielectric, ferroelectric, and piezoelectric properties of (001) BiScO3-PbTiO3 epitaxial films near the morphotropic phase boundary

被引：31

作者：

Nino, JC ^{[1
]}

Trolier-McKinstry, S ^{[1
]}

机构：

[1] Penn State Univ, Mat Res Inst, University Pk, PA 16802 USA

来源：

JOURNAL OF MATERIALS RESEARCH | 2004年 / 19卷 / 02期

关键词：

D O I：

10.1557/jmr.2004.19.2.568

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The dielectric, ferroelectric, and piezoelectric properties of (001) BiScO3-PbTiO3 epitaxial films near the morphotropic phase boundary were investigated. Epitaxial films, 1-mum thick, were grown on (100) SrRuO3/(100) LaAIO(3) substrates by pulsed laser deposition from a BiScO3-PbTiO3 (40/60) ceramic target. The films had room temperature dielectric constant of 850, tandelta = 0.08, and maximum dielectric constant of 5530 at 455 degreesC. Well-saturated hysteresis loops with a remanent polarization of 42 muC/cm(2) and a coercive field of 75 kV/cm were observed. The effective transverse piezoelectric coefficient e(31,f) was -12 C/m(2). This result is quite encouraging for sensor and actuator device development because the observed piezoelectric properties are as good as (001) oriented Pb(Zr,Ti)O-3 films (e(31,f) similar to -12 C/m(2)) while the transition temperature is 100 degreesC higher

引用

页码：568 / 572

页数：5

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