Low threshold room-temperature continuous-wave operation of 2.24-3.04 μm GaInAsSb/AlGaAsSb quantum-well lasers

被引：142

作者：

Lin, C ^{[1
]}

Grau, M ^{[1
]}

Dier, O ^{[1
]}

Amann, MC ^{[1
]}

机构：

[1] Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, Germany

来源：

APPLIED PHYSICS LETTERS | 2004年 / 84卷 / 25期

关键词：

D O I：

10.1063/1.1760218

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

3.04 mum emission has been achieved in GaInAsSb/AlGaAsSb double-quantum-well ridge waveguide diode lasers in continuous-wave mode up to 20 degreesC. A threshold current density of 343 A/cm(2) was recorded from a laser with 2 mm cavity length and 30 mum ridge width in pulsed-mode operation. A characteristic temperature of 30 K was measured from a 1.2 mm long device. Threshold current densities and characteristic temperatures of GaInAsSb/AlGaAsSb laser diodes with wavelengths from 2.24 to 3.04 mum are summarized. The threshold current density per quantum well increases strongly with wavelength; at 3.04 mum, it is three times that value of a 2.24 mum device. (C) 2004 American Institute of Physics.

引用

页码：5088 / 5090

页数：3

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