Negative dynamic mobility of electrons in silicon in the far-infrared range

被引：1

作者：

Brazis, R ^{[1
]}

Asadauskas, L ^{[1
]}

Raguotis, R ^{[1
]}

Siegrist, MR ^{[1
]}

机构：

[1] ECOLE POLYTECH FED LAUSANNE,CTR RECH PHYS PLASMAS,ASSOC EURATOM CONFEDERAT SUISSE,PPB,CH-1015 LAUSANNE,SWITZERLAND

来源：

INTERNATIONAL JOURNAL OF INFRARED AND MILLIMETER WAVES | 1997年 / 18卷 / 06期

关键词：

far infrared response; semiconductor; n-Si; wave amplification; third harmonic generation;

D O I：

10.1007/BF02678228

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We performed Monte Carlo simulation of electron response to a strong pumping wave (443 GHz) and weak signal harmonic waves (886 and 1329 GHz) in silicon. A negative dynamic conductivity is found to arise for 1329 GHz above a threshold value of the pumping wave amplitude and below a maximum value of the signal wave amplitude in a limited range of phase difference between the waves.

引用

页码：1217 / 1222

页数：6

共 7 条

[1]

AMBRAZEVICIENE V, 1991, NONLINEAR SURFACE EL, P417

[2] DIFFUSION-COEFFICIENT OF ELECTRONS IN SILICON [J].

BRUNETTI, R ;

JACOBONI, C ;

NAVA, F ;

REGGIANI, L ;

BOSMAN, G ;

ZIJLSTRA, RJJ .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (11) :6713-6722

[3] MILLIMETER-WAVE FREQUENCY TRIPLING IN BULK SEMICONDUCTORS [J].

KEILMANN, F ;

BRAZIS, R ;

BARKLEY, H ;

KASPAREK, W ;

THUMM, M ;

ERCKMANN, V .

EUROPHYSICS LETTERS, 1990, 11 (04) :337-342

[4]

LEBWOHL PA, 1979, J APPL PHYS, V44, P1744

[5] INTENSITY DEPENDENCE OF THE 3RD-HARMONIC-GENERATION EFFICIENCY FOR HIGH-POWER FAR-INFRARED RADIATION IN N-SILICON [J].

URBAN, M ;

NIESWAND, C ;

SIEGRIST, MR ;

KEILMANN, F .

JOURNAL OF APPLIED PHYSICS, 1995, 77 (03) :981-984

[6] A precise new method to evaluate Monte Carlo simulations of electron transport in semiconductors [J].

Urban, M ;

Siegrist, MR ;

Asadauskas, L ;

Raguotis, R ;

Brazis, R .

APPLIED PHYSICS LETTERS, 1996, 69 (12) :1776-1778

[7]

URBAN M, 1995, J PHYSICS, V35, P430

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