The band-edge light emission from the metal-oxide-silicon tunneling diode on (110) substrates

被引：8

作者：

Chang, ST

Chen, KF

Shie, CR

Liu, CW

Chen, MJ

Lin, CF

机构：

[1] Natl Taiwan Univ, Dept Elect Engn, Taipei 10617, Taiwan

[2] Natl Taiwan Univ, Grad Inst Elect Engn, Taipei 10617, Taiwan

[3] Natl Taiwan Univ, Inst Electroopt Engn, Taipei 10617, Taiwan

来源：

SOLID-STATE ELECTRONICS | 2002年 / 46卷 / 08期

关键词：

MOS diode; electroluminescence; electron-hole plasma recombination; tunneling;

D O I：

10.1016/S0038-1101(02)00051-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The band-edge electroluminescence at room temperature from metal-oxide-silicon tunneling diodes on (110) substrates was observed. Both the transverse acoustic and the transverse optical phonon lines are necessary to fit emission spectra. A comprehensive picture composed of localized holes, phonons and interface roughness is given to describe the radiation process. The picture can be used to explain the enhanced electroluminescence intensity, as compared to photoluminescence, and can be used to understand the substrate orientation effect on electroluminescence intensity. (C) 2002 Elsevier Science Ltd. All rights reserved.

引用

页码：1113 / 1116

页数：4

共 11 条

[1]

GHETTI A, 1999, P INT EL DEV M IEDM, P731

[2]

HULL R, 1999, PROPERTIES CRYSTALLI, P160

[3] Roughness-enhanced electroluminescence from metal oxide silicon tunneling diodes [J].