Improvement of hot-electron hardness in metal-oxide-semiconductor devices by combination of gate electrode deposited using amorphous Si and gate oxide grown in N2O
被引:7
作者:
ChangLiao, KS
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h-index: 0
ChangLiao, KS
Lan, TY
论文数: 0引用数: 0
h-index: 0
Lan, TY
机构:
来源:
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
|
1996年
/
35卷
/
8A期
关键词:
hot-electron hardness;
MOS capacitor;
amorphous Si;
N2O;
D O I:
10.1143/JJAP.35.L968
中图分类号:
O59 [应用物理学];
学科分类号:
摘要:
A new technique, namely the combination of a gate electrode deposited using amorphous-Si and a gate oxide grown in N2O, is proposed and shown to improve the hot-electron hardness in metal-oxide-semiconductor (MOS) devices. It is found experimentally that MOS capacitors fabricated using this technique exhibit excellent charge-to-breakdown performance. The number of hot-electron-induced interface traps and the flat-band voltage shift are also reduced. The hardness improvement can be explained using a mechanism based on the increase in compressive stress in the oxide, the suppression of hydrogen effects, and the relaxation of SiO2/Si interfacial strain.