IMPROVEMENT OF RADIATION HARDNESS IN POLY-SI GATE MOS CAPACITOR BY USE OF AMORPHOUS-SI

被引：4

作者：

CHANGLIAO, KS

CHUANG, CC

机构：

[1] Department of Nuclear Engineering, National Tsing Hua University, Hsinchu, Taiwan

来源：

ELECTRONICS LETTERS | 1994年 / 30卷 / 18期

关键词：

RADIATION HARDENING (ELECTRONICS); CAPACITORS; SEMICONDUCTOR DEVICES;

D O I：

10.1049/el:19941035

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A poly-Si gate electrode formed by amorphous-Si film is proposed and demonstrated to improve the radiation hardness in MOS capacitors. The improvement of radiation hardness is due to the increase of compressive stress in the oxide. As little change in the device fabrication process is required, it should be useful in practice.

引用

页码：1540 / 1542

页数：3

共 10 条

[1]

BUCHMAN P, 1986, IEEE T, P1352

[2]

CHANGLIAO KS, 1992, JPN J APPL PHYS, V31, pL600

[3]

CHANGLIAO KS, 1992, APPL PHYS LETT, V61, P675

[4] EFFECT OF SYNCHROTRON X-RAY-RADIATION ON THE CHANNEL HOT-CARRIER RELIABILITY OF REOXIDIZED NITRIDED SILICON DIOXIDE [J].