Anodic bonding technique under low temperature and low voltage using evaporated glass

被引：20

作者：

Choi, WB ^{[1
]}

Ju, BK ^{[1
]}

Lee, YH ^{[1
]}

Haskard, MR ^{[1
]}

Sung, MY ^{[1
]}

Oh, MH ^{[1
]}

机构：

[1] KOREA UNIV, DEPT ELECT ENGN, SUNGBUK KU, SEOUL 136701, SOUTH KOREA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1997年 / 15卷 / 02期

关键词：

D O I：

10.1116/1.589603

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A silicon-to-silicon anodic bonding process using a glass layer deposited by electron beam evaporation will be described. Wafers are bonded at a temperature as low as 135 degrees C with an applied voltage as small as 35 V-dc, enabling this technique to be applied to vacuum packaging of microelectronic devices. Experimental results reveal that an evaporated glass layer of more than 1 mu m thick is suitable for anodic bonding. Finally, the role of sodium ions in anodic bonding was also studied by investigating the theoretical bonding mechanism and examining the results of secondary ion mass spectroscopy analysis. (C) 1997 American Vacuum Society.

引用

页码：477 / 481

页数：5

共 14 条

[1] INTERFACE CHARGE CONTROL OF DIRECTLY BONDED SILICON STRUCTURES [J].

BENGTSSON, S ;

ENGSTROM, O .

JOURNAL OF APPLIED PHYSICS, 1989, 66 (03) :1231-1239

[2] LOW-TEMPERATURE ELECTROSTATIC SILICON-TO-SILICON SEALS USING SPUTTERED BOROSILICATE GLASS [J].

BROOKS, AD ;

HARDESTY, CA ;

DONOVAN, RP .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (04) :545-&

[3]

ESASHI M, 1990, SENSOR ACTUAT A-PHYS, V21, P931

[4] Low-temperature silicon direct bonding and interface behaviours [J].

Jiao, JW ;

Lu, DR ;

Xiong, B ;

Wang, WY .

SENSORS AND ACTUATORS A-PHYSICAL, 1995, 50 (1-2) :117-120

[5]

Ko W. H., 1985, MICROMACHINING MICRO, P41

[6] WAFER BONDING FOR SILICON-ON-INSULATOR TECHNOLOGIES [J].

LASKY, JB .

APPLIED PHYSICS LETTERS, 1986, 48 (01) :78-80

[7] BONDING OF SILICON-WAFERS FOR SILICON-ON-INSULATOR [J].

MASZARA, WP ;

GOETZ, G ;

CAVIGLIA, A ;

MCKITTERICK, JB .

JOURNAL OF APPLIED PHYSICS, 1988, 64 (10) :4943-4950

[8] ANODIC BONDING OF SILICON TO SILICON-WAFERS COATED WITH ALUMINUM, SILICON-OXIDE, POLYSILICON OR SILICON-NITRIDE [J].

NESE, M ;

HANNEBORG, A .

SENSORS AND ACTUATORS A-PHYSICAL, 1993, 37-8 :61-67

[9] ALIGNED AU-SI EUTECTIC BONDING OF SILICON STRUCTURES [J].

SHOAF, SE ;

FEINERMAN, AD .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1994, 12 (01) :19-22

[10] BUBBLE-FREE SILICON-WAFER BONDING IN A NON-CLEANROOM ENVIRONMENT [J].

STENGL, R ;

AHN, KY ;

GOSELE, U .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (12) :L2364-L2366

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