Evaluation of Kelvin probe force microscopy for imaging grain boundaries in chalcopyrite thin films

被引：34

作者：

Leendertz, C. ^{[1
]}

Streicher, F. ^{[1
]}

Lux-Steiner, M. Ch. ^{[1
]}

Sadewasser, S. ^{[1
]}

机构：

[1] Hahn Meitner Inst Berlin GmbH, Dept Solar Energy, D-14109 Berlin, Germany

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 11期

关键词：

D O I：

10.1063/1.2354474

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In view of the outstanding performance of polycrystalline thin film solar cells on the basis of Cu(In,Ga)Se-2, the electrical activity at grain boundaries currently receives considerable attention. Recently, Kelvin probe force microscopy (KPFM) has been applied to characterize the properties of individual grain boundaries, observing a drop in the work function in many cases. We present finite element simulations of the electrostatic forces to assess the experimental resolution of KPFM. Depending on the tip-sample distance, the observed drop in the work function amounts to only a fraction of the real potential drop. The simulations are considered for different grain boundary models and consequences for the quantitative evaluation of experimental results are discussed. (c) 2006 American Institute of Physics.

引用

页数：3

共 20 条

[1] Finite element simulations of the resolution in electrostatic force microscopy [J].

Belaidi, S ;

Lebon, F ;

Girard, P ;

Leveque, G ;

Pagano, S .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1998, 66 (Suppl 1) :S239-S243

[2] Resolution enhancement and improved data interpretation in electrostatic force microscopy -: art. no. 245403 [J].

Colchero, J ;

Gil, A ;

Baró, AM .

PHYSICAL REVIEW B, 2001, 64 (24)

[3] Texture and electronic activity of grain boundaries in Cu(In,Ga)Se2 thin films [J].

Hanna, G ;

Glatzel, T ;

Sadewasser, S ;

Ott, N ;

Strunk, HP ;

Rau, U ;

Werner, JH .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2006, 82 (01) :1-7

[4] Capacitive effects on quantitative dopant profiling with scanned electrostatic force microscopes [J].

Hochwitz, T ;

Henning, AK ;

Levey, C ;

Daghlian, C ;

Slinkman, J .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1996, 14 (01) :457-462

[5] Does the local built-in potential on grain boundaries of Cu(In,Ga)Se2 thin films benefit photovoltaic performance of the device? [J].

Jiang, CS ;

Noufi, R ;

Ramanathan, K ;

AbuShama, JA ;

Moutinho, HR ;

Al-Jassim, MM .

APPLIED PHYSICS LETTERS, 2004, 85 (13) :2625-2627

[6] Local built-in potential on grain boundary of Cu(In,Ga)Se2 thin films [J].

Jiang, CS ;

Noufi, R ;

AbuShama, JA ;

Ramanathan, K ;

Moutinho, HR ;

Pankow, J ;

Al-Jassim, MM .

APPLIED PHYSICS LETTERS, 2004, 84 (18) :3477-3479

[7] Lift-off process and rear-side characterization of CuGaSe2 chalcopyrite thin films and solar cells -: art. no. 094915 [J].

Marrón, DF ;

Meeder, A ;

Sadewasser, S ;

Würz, R ;

Kaufmann, CA ;

Glatzel, T ;

Schedel-Niedrig, T ;

Lux-Steiner, MC .

JOURNAL OF APPLIED PHYSICS, 2005, 97 (09)

[8] Electrical activity at grain boundaries of Cu(In,Ga)Se2 thin films -: art. no. 033306 [J].

Marrón, DF ;

Sadewasser, S ;

Meeder, A ;

Glatzel, T ;

Lux-Steiner, MC .

PHYSICAL REVIEW B, 2005, 71 (03)

[9] KELVIN PROBE FORCE MICROSCOPY [J].

NONNENMACHER, M ;

OBOYLE, MP ;

WICKRAMASINGHE, HK .

APPLIED PHYSICS LETTERS, 1991, 58 (25) :2921-2923

[10] Compositionally induced valence-band offset at the grain boundary of polycrystalline chalcopyrites creates a hole barrier [J].

Persson, C ;

Zunger, A .

APPLIED PHYSICS LETTERS, 2005, 87 (21) :1-3

← 1 2 →