The Influence of Hf-Composition on Atomic Layer Deposition HfSiON Gated Metal-Oxide-Semiconductor Field-Effect Transistors after Channel-Hot-Carrier Stress

被引：6

作者：

Chen, Shuang-Yuan ^{[1
]}

Chen, Hung-Wen ^{[1
]}

Liu, Chuan-Hsi ^{[2
]}

Cheng, Li-Wei ^{[3
]}

机构：

[1] Natl Taipei Univ Technol, Inst Mechatron Engn, Taipei 106, Taiwan

[2] Natl Taiwan Normal Univ, Dept Mechatron Technol, Taipei 106, Taiwan

[3] United Microelect Corp, Cent R&D Div, Hsinchu 300, Taiwan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2009年 / 48卷 / 04期

关键词：

ELEVATED-TEMPERATURES; DEGRADATION;

D O I：

10.1143/JJAP.48.04C009

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Metal-oxide-semiconductor field-effect transistors (MOSFETs) incorporating hafnium-silicate (HfSiON) dielectrics with different compositions have been fabricated and their hot-carrier injection (HCI) reliability has also been investigated. The experimental results reveal that the HCI degradation of atomic layer deposition (ALD) HfSiON gate dielectrics is minimized at Hf : Si = 1 : 3. Moreover, the experimental results also show that the increment of oxide trapped charges (Delta N-ot) depends on Hf content and is about one order of magnitude larger than that of interface traps (Delta N-it) after channel-hot-carrier (CHC) stress. Finally, some important interfacial parameters, including Delta N-it, Delta D-it, and Delta N-ot, have also been characterized through the charge pumping (CP) technique. (C) 2009 The Japan Society of Applied Physics

引用

页数：4

共 14 条

[1] Electrical characterization and carrier transportation in Hf-silicate dielectrics using ALD gate stacks for 90 nm node MOSFETs [J].

Chen, H. W. ;

Chen, S. Y. ;

Chen, K. C. ;

Huang, H. S. ;

Liu, C. H. ;

Chiu, F. C. ;

Liu, K. W. ;

Lin, K. C. ;

Cheng, L. W. ;

Lin, C. T. ;

Ma, G. H. ;

Sun, S. W. .

APPLIED SURFACE SCIENCE, 2008, 254 (19) :6127-6130

[2] Investigation of DC hot-carrier degradation at elevated temperatures for p-channel metal-oxide-semiconductor field-effect transistors of 0.13 μm technology [J].

Chen, Shuang-Yuan ;

Tu, Chia-Hao ;

Lin, Jung-Chun ;

Wang, Mu-Chun ;

Kao, Po-Wei ;

Lin, Memg-Hong ;

Wu, Ssu-Han ;

Jhou, Ze-Wei ;

Chou, Sam ;

Ko, Joe ;

Haung, Heng-Sheng .

JAPANESE JOURNAL OF APPLIED PHYSICS, 2008, 47 (03) :1527-1531

[3] Charge trapping at deep states in Hf-silicate based high-κ gate dielectrics [J].

Chowdhury, N. A. ;

Misra, D. .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2007, 154 (02) :G30-G37

[4] A new oxide-trap based on charge-pumping (OTCP) extraction method for irradiated MOSFET devices: Part I (high frequencies) [J].

Djezzar, B ;

Oussalah, S ;

Smatti, A .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2004, 51 (04) :1724-1731

[5] USE OF CHARGE PUMPING CURRENTS TO MEASURE SURFACE STATE DENSITIES IN MOS-TRANSISTORS [J].

ELLIOT, ABM .

SOLID-STATE ELECTRONICS, 1976, 19 (03) :241-247

[6] A RELIABLE APPROACH TO CHARGE-PUMPING MEASUREMENTS IN MOS-TRANSISTORS [J].

GROESENEKEN, G ;

MAES, HE ;

BELTRAN, N ;

DEKEERSMAECKER, RF .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (01) :42-53

[7]

HAN JP, 2003, S VLSI, P161

[8]

HOWARD CH, 2005, S VLSI TECHN, P170

[9]

Kim JP, 2004, IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2004, TECHNICAL DIGEST, P125

[10] Investigation of DC hot-carrier degradation at elevated temperatures for n-channel metal-oxide-semiconductor field-effect-transistor of 0.13 μm technology [J].

Lin, Jung-Chun ;

Chen, Shuang-Yuan ;

Chen, Hung-Wen ;

Jhou, Ze-Wei ;

Lin, Hung-Chuan ;

Chou, Sam ;

Ko, Joe ;

Lei, Tien-Fu ;

Haung, Heng-Sheng .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2006, 45 (4B) :3144-3146

← 1 2 →