Critical issues in the heteroepitaxial growth of alkaline-earth oxides on silicon

被引：120

作者：

Lettieri, J ^{[1
]}

Haeni, JH ^{[1
]}

Schlom, DG ^{[1
]}

机构：

[1] Penn State Univ, Dept Mat Sci & Engn, University Pk, PA 16803 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 2002年 / 20卷 / 04期

关键词：

D O I：

10.1116/1.1482710

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The critical aspects of the epitaxial growth of alkaline-earth oxides on silicon are described in detail. The step by step transition front the silicon to the alkaline-earth oxide as shown through reflection high energy electron diffraction is presented, with emphasis placed on the favorable interface stability, oxidation, structural, and strain considerations for each stage of the growth via molecular beam epitaxy. (C) 2002 American Vacuum Society.

引用

页码：1332 / 1340

页数：9

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