Fabrication, structural characterization, and photoluminescence of Ga-doped ZnO nanobelts

被引：18

作者：

Yang, Ya ^{[1
]}

Qi, Junjie ^{[1
]}

Liao, Qingliang ^{[1
]}

Zhang, Yue ^{[1
,2
]}

Yan, Xiaoqing ^{[1
]}

Huang, Yunhua ^{[1
]}

Tang, Lidan ^{[1
]}

机构：

[1] Univ Sci & Technol Beijing, Dept Mat Phys, Beijing 100083, Peoples R China

[2] Univ Sci & Technol Beijing, State Key Lab Adv Met & Mat, Beijing 100083, Peoples R China

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2009年 / 94卷 / 04期

基金：

国家高技术研究发展计划(863计划);

关键词：

OPTICAL-PROPERTIES; OXIDE; FILMS; NANOWIRES; AL;

D O I：

10.1007/s00339-008-4842-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Ga-doped ZnO nanobelts have been fabricated via a carbon thermal reduction deposition approach with the assistance of gold catalyst. The nanobelts consist of single-crystalline wurtzite ZnO crystal with Ga doping content of about 7% and growth along [0001] direction. Raman scattering analysis demonstrates that the appearance of the additional mode at 631 cm(-1) is induced by the Ga dopant and the redshift of ZnO Raman E-1L mode is attributed to the force constant changes caused by Ga doping. Room temperature photoluminescence reveals the redshift and broadening of ZnO ultraviolet emission peak after Ga doping. These nanobelts were promising building blocks in constructing nanoscale electronic and optoelectronic devices.

引用

页码：799 / 803

页数：5

共 28 条

[1] Identification of oxygen and zinc vacancy optical signals in ZnO [J].

Borseth, T. Moe ;

Svensson, B. G. ;

Kuznetsov, A. Yu. ;

Klason, P. ;

Zhao, Q. X. ;

Willander, M. .

APPLIED PHYSICS LETTERS, 2006, 89 (26)

[2] Raman scattering in ZnO thin films doped with Fe, Sb, Al, Ga, and Li [J].

Bundesmann, C ;

Ashkenov, N ;

Schubert, M ;

Spemann, D ;

Butz, T ;

Kaidashev, EM ;

Lorenz, M ;

Grundmann, M .

APPLIED PHYSICS LETTERS, 2003, 83 (10) :1974-1976

[3] Structural, electrical, and optical properties of transparent conductive oxide ZnO:Al films prepared by dc magnetron reactive sputtering [J].

Chen, M ;

Pei, ZL ;

Wang, X ;

Sung, C ;

Wen, LS .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2001, 19 (03) :963-970

[4] RAMAN EFFECT IN ZINC OXIDE [J].

DAMEN, TC ;

PORTO, SPS ;

TELL, B .

PHYSICAL REVIEW, 1966, 142 (02) :570-&

[5] Neutron diffraction study on the defect structure of indium-tin-oxide [J].

González, GB ;

Cohen, JB ;

Hwang, JH ;

Mason, TO ;

Hodges, JP ;

Jorgensen, JD .

JOURNAL OF APPLIED PHYSICS, 2001, 89 (05) :2550-2555

[6] Room-temperature ultraviolet nanowire nanolasers [J].

Huang, MH ;

Mao, S ;

Feick, H ;

Yan, HQ ;

Wu, YY ;

Kind, H ;

Weber, E ;

Russo, R ;

Yang, PD .

SCIENCE, 2001, 292 (5523) :1897-1899

[7] Field emission of a single in-doped ZnO nanowire [J].

Huang, Yunhua ;

Zhang, Yue ;

Gu, Yousong ;

Bai, Xuedong ;

Qi, Junjie ;

Liao, Qingliang ;

Liu, Juan .

JOURNAL OF PHYSICAL CHEMISTRY C, 2007, 111 (26) :9039-9043

[8] In situ mechanical properties of individual ZnO nanowires and the mass measurement of nanoparticles [J].

Huang, Yunhua ;

Bai, Xuedong ;

Zhang, Yue .

JOURNAL OF PHYSICS-CONDENSED MATTER, 2006, 18 (15) :L179-L184

[9] Aluminum-doped zinc oxide films as transparent conductive electrode for organic light-emitting devices [J].

Jiang, X ;

Wong, FL ;

Fung, MK ;

Lee, ST .

APPLIED PHYSICS LETTERS, 2003, 83 (09) :1875-1877

[10] Indium-doped zinc oxide nanobelts [J].

Jie, JS ;

Wang, GZ ;

Han, XH ;

Yu, QX ;

Liao, Y ;

Li, GP ;

Hou, JG .

CHEMICAL PHYSICS LETTERS, 2004, 387 (4-6) :466-470

← 1 2 3 →