Modeling of junction formation and drive-in in ion implanted HgCdTe

被引：25

作者：

HolanderGleixner, S ^{[1
]}

Williams, BL ^{[1
]}

Robinson, HG ^{[1
]}

Helms, CR ^{[1
]}

机构：

[1] STANFORD UNIV,DEPT MAT SCI & ENGN,STANFORD,CA 94305

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1997年 / 26卷 / 06期

关键词：

diffusion limited; flexible manufacturing; HgCdTe; infrared focal plane arrays; ion implantation; n-on-p; process modeling;

D O I：

10.1007/s11664-997-0207-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

N-on-p junction formation and drive-in in ion implanted Hg0.8Cd0.2Te photodiodes have been studied. A model of the junction formation and drive-in processes has been developed that accounts for the variations in injected Hg interstitial concentration, background point defect and extrinsic doping levels, sample geometry, and annealing conditions. The limiting mechanisms controlling junction drive-in mere investigated using the model. Experimental data showed the junction drive-in rate was proportional to the square root of time, indicating a diffusion limited process. The diffusion limited process is the result of a solubility limit for the Hg interstitial concentration. This limit is approximately the same value as that obtained for Hg interstitials in Hg saturated Hg0.8Cd0.2Te in type conversion and self-diffusion experiments (DICI = 1.43 x 10(13)exp(-.457 eV/kT)*P-Hg).

引用

页码：629 / 634

页数：6

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