A fully integrated neural recording amplifier with DC input stabilization

被引:105
作者
Mohseni, P [1 ]
Najafi, K [1 ]
机构
[1] Univ Michigan, Dept Elect & Comp Sci, Ctr Wirelass Integrated MicroSyst, WIMS, Ann Arbor, MI 48109 USA
关键词
bandpass amplifier; dc baseline stabilization; fully integrated; low-noise; low-power; neural recording;
D O I
10.1109/TBME.2004.824126
中图分类号
R318 [生物医学工程];
学科分类号
0831 ;
摘要
This paper presents a low-power low-noise fully integrated bandpass operational amplifier for a variety of biomedical neural recording applications. A standard two-stage CMOS amplifier in a closed-loop resistive feedback configuration provides a stable ac gain of 39.3 dB at 1 kHz. A subthreshold PMOS input transistor is utilized to clamp the large and random dc open circuit potentials that normally exist at the electrode-electrolyte interface. The low cutoff frequency of the amplifier is programmable up to 50 Hz, while its high cutoff frequency is measured to be 9.1 kHz. The tolerable dc input range is measured to be at least +/-0.25 V with a dc rejection factor of at least 29 dB. The amplifier occupies 0.107 mm 2 in die area, and dissipates 115 muW from a 3 V power supply. The total measured input-referred noise voltage in the frequency range of 0.1-10 kHz is 7.8 muV(rms). It is fabricated using AMI 1.5 mum double-poly double-metal n-well CMOS process. This paper presents full characterization of the dc, ac, and noise performance of this amplifier through in vitro measurements in saline using two different neural recording electrodes.
引用
收藏
页码:832 / 837
页数:6
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