GaN-based light-emitting diode structure with monolithically integrated sidewall deflectors for enhanced surface emission

被引：27

作者：

Lee, Jae-Soong ^{[1
]}

Lee, Joonhee

Kim, Sunghwan

Jeon, Heonsu

机构：

[1] Seoul Natl Univ, Sch Phys, Seoul 151747, South Korea

[2] Seoul Natl Univ, Interuniv Semicond Res Ctr, Seoul 151747, South Korea

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2006年 / 18卷 / 13-16期

关键词：

GaN; integrated optics; light deflectors; light-emitting diodes (LED); surface emission; total internal reflection (TIR);

D O I：

10.1109/LPT.2006.879559

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

To improve the overall surface emission efficiency, the structure of a standard GaN light-emitting diode (LED) was modified; the mesa sidewalls were etched at an angle, and deep enough to reach the sapphire substrate. Photoexcitation experiments, including photoluminescence and near- and far-field emission patterns, were performed on LED-like test devices, and results indicated that the angled sidewalls efficiently deflect photons that are initially guided laterally within the GaN epilayer in the off-surface direction. For a sidewall angle of 30 degrees, the total surface emission strength was improved by a factor exceeding three. Computer simulations produced results consistent with the experimental observations.

引用

页码：1588 / 1590

页数：3

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