Growth modes of ZnSe on GaAs

被引：8

作者：

Qiu, Y ^{[1
]}

Osinsky, A ^{[1
]}

ElEmawy, AA ^{[1
]}

Littlefield, E ^{[1
]}

Temkin, H ^{[1
]}

Faleev, N ^{[1
]}

机构：

[1] AF IOFFE PHYS TECH INST,ST PETERSBURG 194021,RUSSIA

来源：

JOURNAL OF APPLIED PHYSICS | 1996年 / 79卷 / 02期

关键词：

D O I：

10.1063/1.362709

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Growth modes of coherently strained ZnSe on GaAs are investigated as a function of the surface preparation and temperature. We find that the flattest and most uniform layers are grown at low temperatures, similar to 300 degrees C, on surfaces exposed to high-temperature Se treatment. Nucleation rate depends on the surface coverage of Ga2Se3. High-temperature exposure of Ga-rich, (001)-oriented, GaAs to Se reduces the thickness required for the transition to a two-dimensional growth mode. The surface roughness increases with temperature as a result of three-dimensional island growth. (C) 1996 American Institute of Physics.

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页码：1164 / 1166

页数：3

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