Comparison of structural and photoluminescence properties of ZnO thin films grown by pulsed laser deposition and ultrasonic spray pyrolysis

被引:15
作者
Zhao, Jun-Liang
Li, Xiao-Min [1 ]
Bian, Ji-Ming
Yu, Wei-Dong
Zhang, Can-Yun
机构
[1] Chinese Acad Sci, Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine, Shanghai 200050, Peoples R China
[2] Chinese Acad Sci, Grad Sch, Beijing 100039, Peoples R China
基金
中国国家自然科学基金;
关键词
zinc oxide; ultrasonic spray pyrolysis; pulsed laser deposition; photoluminescence; transmission electron microscopy;
D O I
10.1016/j.tsf.2006.06.032
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
ZnO thin films have been deposited by pulsed laser deposition (PLD) and ultrasonic spray pyrolysis (USP) method, respectively. X-ray diffraction and transmission electron microscopy characterizations indicate that ZnO film grown by PLD exhibits better crystallinity than that grown by USP. Photoluminescence spectra show that the near-band edge ultraviolet emission of film grown by PLD is narrower and shifts to higher energy, compared with that of film grown by USP. In the visible range, ZnO film grown by PLD exhibits four local level emission centered at 470 nm, 486 nm, 544 nm, and 613 nm, respectively, while the film grown by USP only presents a weak broad band emission centered at 502 nm. Hall measurement shows higher carrier density and lower hall mobility in ZnO film grown by PLD than that in film grown by USP. The higher density of intrinsic defects as well as higher crystallintiy is considered to account for the difference of photoluminescence in ZnO film grown by PLD with that in film grown by USP. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码:1763 / 1766
页数:4
相关论文
共 19 条
[1]   p-type ZnO films by monodoping of nitrogen and ZnO-based p-n homojunctions [J].
Bian, JM ;
Li, XM ;
Zhang, CY ;
Yu, WD ;
Gao, XD .
APPLIED PHYSICS LETTERS, 2004, 85 (18) :4070-4072
[2]   Synthesis and characterization of two-layer-structured ZnO p-n homojunctions by ultrasonic spray pyrolysis [J].
Bian, JM ;
Li, XM ;
Zhang, CY ;
Chen, LD ;
Yao, Q .
APPLIED PHYSICS LETTERS, 2004, 84 (19) :3783-3785
[3]   Deposition and electrical properties of N-In codoped p-type ZnO films by ultrasonic spray pyrolysis [J].
Bian, JM ;
Li, XM ;
Gao, XD ;
Yu, WD ;
Chen, LD .
APPLIED PHYSICS LETTERS, 2004, 84 (04) :541-543
[4]   Hydrogen-doped high conductivity ZnO films deposited by radio-frequency magnetron sputtering [J].
Chen, LY ;
Chen, WH ;
Wang, JJ ;
Hong, FCN ;
Su, YK .
APPLIED PHYSICS LETTERS, 2004, 85 (23) :5628-5630
[5]   Hydrogen: A relevant shallow donor in zinc oxide [J].
Hofmann, DM ;
Hofstaetter, A ;
Leiter, F ;
Zhou, HJ ;
Henecker, F ;
Meyer, BK ;
Orlinskii, SB ;
Schmidt, J ;
Baranov, PG .
PHYSICAL REVIEW LETTERS, 2002, 88 (04) :4
[6]   Optical properties of pulsed laser deposited ZnO thin films [J].
Hu, WS ;
Liu, ZG ;
Sun, J ;
Zhu, SN ;
Xu, QQ ;
Feng, D ;
Ji, ZM .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1997, 58 (06) :853-857
[7]   Violet and UV luminescence emitted from ZnO thin films grown on sapphire by pulsed laser deposition [J].
Jin, BJ ;
Im, S ;
Lee, SY .
THIN SOLID FILMS, 2000, 366 (1-2) :107-110
[8]   Fabrication of the low-resistive p-type ZnO by codoping method [J].
Joseph, M ;
Tabata, H ;
Saeki, H ;
Ueda, K ;
Kawai, T .
PHYSICA B-CONDENSED MATTER, 2001, 302 :140-148
[9]   Green luminescent center in undoped zinc oxide films deposited on silicon substrates [J].
Lin, BX ;
Fu, ZX ;
Jia, YB .
APPLIED PHYSICS LETTERS, 2001, 79 (07) :943-945
[10]   ZnO: growth, doping & processing [J].
Norton, D. P. ;
Heo, Y. W. ;
Ivill, M. P. ;
Ip, K. ;
Pearton, S. J. ;
Chisholm, M. F. ;
Steiner, T. .
MATERIALS TODAY, 2004, 7 (06) :34-40