High quantum efficiency InGaN/GaN structures emitting at 540 nm

被引：15

作者：

Graham, D. M. ^{[1
]}

Dawson, P. ^{[1
]}

Godfrey, M. J. ^{[1
]}

Kappers, M. J.

Costa, P. M. F. J. ^{[2
]}

Vickers, M. E. ^{[2
]}

Datta, R. ^{[2
]}

Humphreys, C. J. ^{[2
]}

Thrush, E. J.

机构：

[1] Univ Manchester, Sch Phys & Astron, Manchester M60 1QD, Lancs, England

[2] Univ Cambridge, Dept Mat Sci & Met, Cambridge CB2 3QZ, England

来源：

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 6 | 2006年 / 3卷 / 06期

基金：

英国工程与自然科学研究理事会;

关键词：

D O I：

10.1002/pssc.200565252

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We present a study of the optical properties of a series of InGaN/GaN multiple quantum well structures, with room temperature peak emission wavelengths of 540 nm. By adopting a two-temperature growth method and designing structures to have short radiative lifetimes, we have obtained room temperature internal photoluminescence quantum efficiencies of 8%. Transmission electron microscopy images have revealed the presence of edge-type threading misfit dislocations in the multiple quantum well stack, which may be preventing the efficiency from reaching the very high values obtained in blue emitting InGaN/GaN multiple quantum well structures. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：1970 / 1973

页数：4

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