Amorphous In-Ga-Zn-O coplanar homojunction thin-film transistor

被引：163

作者：

Sato, Ayumu ^{[1
]}

Abe, Katsumi ^{[1
]}

Hayashi, Ryo ^{[1
]}

Kumomi, Hideya ^{[1
]}

Nomura, Kenji ^{[2
]}

Kamiya, Toshio ^{[2
,3
]}

Hirano, Masahiro ^{[2
,4
]}

Hosono, Hideo ^{[2
,3
,4
]}

机构：

[1] Canon Inc, Ohta Ku, Tokyo 1468501, Japan

[2] Japan Sci & Technol Agcy, ERATO SORST, Midori Ku, Yokohama 2268503, Japan

[3] Tokyo Inst Technol, Mat & Struct Lab, Midori Ku, Yokohama 2268503, Japan

[4] Tokyo Inst Technol, Frontier Res Ctr, Midori Ku, Yokohama, Kanagawa 2268503, Japan

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 13期

关键词：

amorphous semiconductors; contact resistance; electrical resistivity; gallium compounds; hydrogen; II-VI semiconductors; indium compounds; ohmic contacts; semiconductor thin films; silicon compounds; thin film transistors; wide band gap semiconductors; OPTICAL-PROPERTIES; FABRICATION; TFTS;

D O I：

10.1063/1.3112566

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A fabrication process of coplanar homojunction thin-film transistors (TFTs) is proposed for amorphous In-Ga-Zn-O (a-IGZO), which employs highly doped contact regions naturally formed by deposition of upper protection layers made of hydrogenated silicon nitride (SiNX:H). The direct deposition of SiNX:H reduced the resistivity of the semiconductive a-IGZO layer down to 6.2x10(-3) Omega cm and formed a nearly ideal Ohmic contact with a low parasitic source-to-drain resistance of 34 Omega cm. Simple evaluation of field-effect mobilities (mu(sat)) overestimated their values especially for short-channel TFTs, while the channel resistance method proved that mu(sat) was almost constant at 9.5 cm(2) V-1 s(-1).

引用

页数：3

共 21 条

[1] Charge carrier induced lattice strain and stress effects on As activation in Si [J].