Deep levels and persistent photoconductivity in GaN thin films

被引：194

作者：

Qiu, CH

Pankove, JI

机构：

[1] Astralux Incorporated, Boulder

来源：

APPLIED PHYSICS LETTERS | 1997年 / 70卷 / 15期

关键词：

D O I：

10.1063/1.118799

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Photocurrent decay in GaN thin films was studied in the time span from a few seconds to several days. The persistent photoconductivity (PPC) behavior was observed not only in Mg-doped p-type GaN films but also in undoped n-type GaN films. The photoconductivity spectra and the photocurrent response time were measured using a weak probe light at several times after the samples had been kept in the dark. During the relaxation, the photocurrent due to the subband-gap probe light decreased more than the photocurrent due to the UV probe light. It is suggested that metastable centers at 1.1, 1.40, and 2.04 eV above the valence band edge are responsible for the PPC behavior in Mg-doped GaN, and that Ga vacancy is the candidate for PPC effect in n-type GaN. (C) 1997 American Institute of Physics.

引用

收藏

页码：1983 / 1985

页数：3

相关论文

共 23 条

[11] Thermally stimulated current trap in GaN [J].

Look, DC ;

Fang, ZQ ;

Kim, W ;

Aktas, O ;

Botchkarev, A ;

Salvador, A ;

Morkoc, H .

APPLIED PHYSICS LETTERS, 1996, 68 (26) :3775-3777

[12] SHALLOW DONORS IN GAN - THE BINDING-ENERGY AND THE ELECTRON EFFECTIVE-MASS [J].

MEYER, BK ;

VOLM, D ;

GRABER, A ;

ALT, HC ;

DETCHPROHM, T ;

AMANO, A ;

AKASAKI, I .

SOLID STATE COMMUNICATIONS, 1995, 95 (09) :597-600

[13] CANDELA-CLASS HIGH-BRIGHTNESS INGAN/ALGAN DOUBLE-HETEROSTRUCTURE BLUE-LIGHT-EMITTING DIODES [J].

NAKAMURA, S ;

MUKAI, T ;

SENOH, M .

APPLIED PHYSICS LETTERS, 1994, 64 (13) :1687-1689

[14] HIGH-POWER INGAN/GAN DOUBLE-HETEROSTRUCTURE VIOLET LIGHT-EMITTING-DIODES [J].

NAKAMURA, S ;

SENOH, M ;

MUKAI, T .

APPLIED PHYSICS LETTERS, 1993, 62 (19) :2390-2392

[15] HIGH-POWER GAN P-N-JUNCTION BLUE-LIGHT-EMITTING DIODES [J].

NAKAMURA, S ;

MUKAI, T ;

SENOH, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1991, 30 (12A) :L1998-L2001

[16] Role of hydrogen in doping of GaN [J].

Neugebauer, J ;

Van de Walle, CG .

APPLIED PHYSICS LETTERS, 1996, 68 (13) :1829-1831

[17] Gallium vacancies and the yellow luminescence in GaN [J].

Neugebauer, J ;

Van de Walle, CG .

APPLIED PHYSICS LETTERS, 1996, 69 (04) :503-505

[18] ATOMIC GEOMETRY AND ELECTRONIC-STRUCTURE OF NATIVE DEFECTS IN GAN [J].

NEUGEBAUER, J ;

VAN DE WALLE, CG .

PHYSICAL REVIEW B, 1994, 50 (11) :8067-8070

[19] Photocurrent decay in n-type GaN thin films [J].

Qiu, CH ;

Melton, W ;

Leksono, MW ;

Pankove, JI ;

Keller, BP ;

DenBaars, SP .

APPLIED PHYSICS LETTERS, 1996, 69 (09) :1282-1284

[20] STUDY OF DEFECT STATES IN GAN FILMS BY PHOTOCONDUCTIVITY MEASUREMENT [J].

QIU, CH ;

HOGGATT, C ;

MELTON, W ;

LEKSONO, MW ;

PANKOVE, JI .

APPLIED PHYSICS LETTERS, 1995, 66 (20) :2712-2714