Crystallization and electrical property change on the annealing of amorphous indium-oxide and indium-tin-oxide thin films

被引：134

作者：

Morikawa, H ^{[1
]}

Fujita, M ^{[1
]}

机构：

[1] Nagoya Inst Technol, Showa Ku, Nagoya, Aichi 4668555, Japan

来源：

THIN SOLID FILMS | 2000年 / 359卷 / 01期

关键词：

indium-oxide; indium-tin-oxide; sputtering; crystallization;

D O I：

10.1016/S0040-6090(99)00749-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The relation of the progress of crystallization in indium-oxide thin films to the change of electrical properties was studied and compared with the results on indium-tin-oxide thin films. The resistivity of amorphous indium-oxide thin films was lower than that of indium-tin-oxide thin films, and increased with the progress of the crystallization contrary to the case of indium-tin-oxide thin films. The resistivity change on annealing of the amorphous film was almost the same between annealing in vacuum and in air. By comparison of the carrier concentration in indium-oxide thin films with that in indium-tin-oxide films, the contribution of ionized Sn to the carrier concentration has been estimated. (C) 2000 Elsevier Science S.A. All rights reserved.

引用

页码：61 / 67

页数：7

共 14 条

[1] ELECTRICAL AND OPTICAL-PROPERTIES OF AMORPHOUS INDIUM OXIDE [J].

BELLINGHAM, JR ;

PHILLIPS, WA ;

ADKINS, CJ .

JOURNAL OF PHYSICS-CONDENSED MATTER, 1990, 2 (28) :6207-6221

[2] ELECTROOPTICAL PROPERTIES OF THIN INDIUM TIN OXIDE-FILMS - LIMITATIONS ON PERFORMANCE [J].

DHERE, RG ;

GESSERT, TA ;

SCHILLING, LL ;

NELSON, AJ ;

JONES, KM ;

AHARONI, H ;

COUTTS, TJ .

SOLAR CELLS, 1987, 21 :281-290

[3] THE DEPENDENCE OF THE ELECTRICAL-PROPERTIES OF ION-BEAM SPUTTERED INDIUM TIN OXIDE ON ITS COMPOSITION AND STRUCTURE [J].

GESSERT, TA ;

WILLIAMSON, DL ;

COUTTS, TJ ;

NELSON, AJ ;

JONES, KM ;

DHERE, RG ;

AHARONI, H ;

ZURCHER, P .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (04) :1314-1315

[4] POSTDEPOSITION ANNEALING INFLUENCE ON SPUTTERED INDIUM TIN OXIDE FILM CHARACTERISTICS [J].

HIGUCHI, M ;

UEKUSA, S ;

NAKANO, R ;

YOKOGAWA, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (1A) :302-306

[5] ELECTRICAL-PROPERTIES OF VACUUM-DEPOSITED INDIUM OXIDE AND INDIUM TIN OXIDE-FILMS [J].

MIZUHASHI, M .

THIN SOLID FILMS, 1980, 70 (01) :91-100

[6] Annealing effects on opto-electronic properties of sputtered and thermally evaporated indium-tin-oxide films [J].

Morgan, DV ;

Aliyu, YH ;

Bunce, RW ;

Salehi, A .

THIN SOLID FILMS, 1998, 312 (1-2) :268-272

[7] Crystal growth of ITO films prepared by DC magnetron sputtering on C film [J].

Morikawa, H ;

Sumi, H ;

Kohyama, M .

THIN SOLID FILMS, 1996, 281 :202-205

[8] Crystallization and decrease in resistivity on heat treatment of amorphous indium tin oxide thin films prepared by dc magnetron sputtering [J].

Morikawa, H ;

Fujita, M .

THIN SOLID FILMS, 1999, 339 (1-2) :309-313

[9]

MORIKAWA H, 1998, P 4 SPEC S ADV MAT, P307

[10] INFLUENCE OF SUBSTRATE-TEMPERATURE AND FILM THICKNESS ON THE STRUCTURE OF REACTIVELY EVAPORATED IN2O3 FILMS [J].

MURANAKA, S ;

BANDO, Y ;

TAKADA, T .

THIN SOLID FILMS, 1987, 151 (03) :355-364

← 1 2 →