Evidence of storing and erasing of electrons in a nanocrystalline-Si based memory device at 77 K

被引：28

作者：

Banerjee, S ^{[1
]}

Huang, SY ^{[1
]}

Yamanaka, T ^{[1
]}

Oda, S ^{[1
]}

机构：

[1] Tokyo Inst Technol, Res Ctr Quantum Effect Elect, Meguro Ku, Tokyo 1528552, Japan

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2002年 / 20卷 / 03期

关键词：

D O I：

10.1116/1.1481871

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1135 / 1138

页数：4

共 14 条

[1] Beyond CMOS: quantum devices [J].

Gautier, J .

MICROELECTRONIC ENGINEERING, 1997, 39 (1-4) :263-272

[2] A silicon single-electron transistor memory operating at room temperature [J].

Guo, LJ ;

Leobandung, E ;

Chou, SY .

SCIENCE, 1997, 275 (5300) :649-651

[3] Fabrication and characterization of room temperature silicon single electron memory [J].

Guo, LJ ;

Leobandung, E ;

Zhuang, L ;

Chou, SY .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1997, 15 (06) :2840-2843

[4] Emission lifetime of polarizable charge stored in nano-crystalline Si based single-electron memory [J].

Hinds, BJ ;

Yamanaka, T ;

Oda, S .

JOURNAL OF APPLIED PHYSICS, 2001, 90 (12) :6402-6408

[5] Fabrication of nanocrystalline silicon with small spread of particle size by pulsed gas plasma [J].

Ifuku, T ;

Otobe, M ;

Itoh, A ;

Oda, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1997, 36 (6B) :4031-4034

[6] Quantum mechanical effects in the silicon quantum dot in a single-electron transistor [J].

Ishikuro, H ;

Hiramoto, T .

APPLIED PHYSICS LETTERS, 1997, 71 (25) :3691-3693

[7] CAPTURE AND EMISSION KINETICS OF INDIVIDUAL SI-SIO2 INTERFACE STATE S [J].

KIRTON, MJ ;

UREN, MJ .

APPLIED PHYSICS LETTERS, 1986, 48 (19) :1270-1272

[8]

MEIRAV U, 1995, SEMICONDUCTOR SCI TE, V10, P255

[9] Si single-electron tunneling transistor with nanoscale floating dot stacked on a Coulomb island by self-aligned process [J].

Nakajima, A ;

Futatsugi, T ;

Kosemura, K ;

Fukano, T ;

Yokoyama, N .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1999, 17 (05) :2163-2171

[10] Room temperature operation of Si single-electron memory with self-aligned floating dot gate [J].

Nakajima, A ;

Futatsugi, T ;

Kosemura, K ;

Fukano, T ;

Yokoyama, N .

APPLIED PHYSICS LETTERS, 1997, 70 (13) :1742-1744

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