Reliability Impact of Chalcogenide-Structure Relaxation in Phase-Change Memory (PCM) Cells-Part I: Experimental Study

被引：138

作者：

Ielmini, Daniele ^{[1
,2
]}

Sharma, Deepak ^{[1
,2
]}

Lavizzari, Simone ^{[1
,2
]}

Lacaita, Andrea L. ^{[1
,2
,3
]}

机构：

[1] Politecn Milan, Dipartimento Elettron & Informaz, I-20133 Milan, Italy

[2] Politecn Milan, Italian Univ Nanoelect Team, I-20133 Milan, Italy

[3] IFN CNR, Sez Politecn Milano, I-20133 Milan, Italy

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2009年 / 56卷 / 05期

关键词：

Amorphous semiconductors; chalcogenide materials; nonvolatile memory; phase-change memory (PCM); reliability estimation; reliability modeling; INTRINSIC DATA RETENTION; CRYSTALLIZATION; RESISTANCE; DRIFT; TRANSIENT; RECOVERY; DYNAMICS;

D O I：

10.1109/TED.2009.2016397

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The phase-change memory (PCM) relies on the electrical properties of the chalcogenide materials to represent the stored bit of information. As a result, data stability depends on structural relaxation (SR) in the amorphous chalcogenide phase, which results in a temperature-accelerated time evolution of the electrical properties of the active material. Here,. we address the time, temperature, and bias dependence of SR effects on the amorphous Ge2Sb2Te5 (GST) material used in PCM cells. Electrical measurements for increasing annealing time and temperature indicate that SR can be described by a defect annihilation process in the amorphous chalcogenide material. Finally, the stability of chalcogenide resistance as a function of the read conditions is discussed, for the purpose of reducing the impact of SR on the reliability of PCM devices.

引用

页码：1070 / 1077

页数：8

共 36 条

[11] Analysis of phase distribution in phase-change nonvolatile memories [J].