Direct extraction technique to derive the junction temperature of HBT's under high self-heating bias conditions

被引：61

作者：

Marsh, SP ^{[1
]}

机构：

[1] Marconi Mat Technol, GaAs MMIC Div, Towcester NN12 8EQ, Northants, England

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2000年 / 47卷 / 02期

关键词：

heterojunction bipolar transistors; power transistors; reliability management; semiconductor device thermal factors; self-heating; temperature measurement; thermal impedance;

D O I：

10.1109/16.822269

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new technique is presented that can directly extract the mean device junction temperature of heterojunction bipolar transistors (HBT's) under high self-heating operating conditions. The method uses three trivial de measurements of the device where the junction temperature is known to be the same. This paper details the technique and applies it to both closely and widely spaced multi-finger HBT's, and compares the results to methods already known.

引用

页码：288 / 291

页数：4

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