Properties of Chemical Vapor Deposition Graphene Transferred by High-Speed Electrochemical Delamination

被引：72

作者：

Ciuk, Tymoteusz ^{[1
,2
,3
]}

Pasternak, Iwona ^{[1
]}

Krajewska, Aleksandra ^{[1
,4
]}

Sobieski, Jan

Caban, Piotr ^{[1
]}

Szmidt, Jan ^{[2
,3
]}

Strupinski, Wlodek ^{[1
]}

机构：

[1] Inst Elect Mat Technol, Wolczynska 133, PL-01919 Warsaw, Poland

[2] Warsaw Univ Technol, Inst Microelect & Optoelect, PL-00662 Warsaw, Poland

[3] Warsaw Univ Technol, Fac Phys, PL-00662 Warsaw, Poland

[4] Mil Univ Technol, Inst Optoelect, PL-00908 Warsaw, Poland

来源：

JOURNAL OF PHYSICAL CHEMISTRY C | 2013年 / 117卷 / 40期

关键词：

RAMAN;

D O I：

10.1021/jp4032139

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We report on the electrical characterization and Raman spectroscopy of chemical vapor deposition copper-grown graphene transferred onto a Si/SiO2 substrate by highspeed (1 mm/s) electrochemical delamination. We determine graphene's sheet resistance, carrier mobility, and concentration as well as its physical quality as a function of the electolyte concentration. Graphene's electrical properties are investigated with standard Hall measurements in van der Pauw geometry and a contactless method that employs a single-post dielectric resonator operating at microwave frequencies. These properties are related to the widely used copper etching technique. The results prove that the high-speed electrochemical delamination provides good-quality graphene within a short time scale.

引用

页码：20833 / 20837

页数：5

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