Heteroepitaxial diamond thin film growth on Ir(001)/MgO(001) substrate by antenna-edge plasma assisted chemical vapor deposition

被引：4

作者：

Tachiki, M ^{[1
]}

Fujisaki, T

Taniyama, N

Kudo, M

Kawarada, H

机构：

[1] Waseda Univ, Sch Sci & Engn, CREST, Japan Sci & Technol Corp,Shinjuku Ku, Room 61-504,Ohkubo 3-4-1, Tokyo 1690072, Japan

[2] Micro Denshi Co Ltd, Kawagoe, Saitama, Japan

[3] JFCC, FCT Project, Nagoya, Aichi, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2002年 / 237卷

关键词：

nucleation; chemical vapor deposition processes; vapor-phase epitaxy; diamond;

D O I：

10.1016/S0022-0248(01)02067-X

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Heteroepitaxial (0 0 1) diamond films are successfully grown on high-quality (0 0 1)Ir/(0 0 1)MgO substrates. To enhance the epitaxial nucleation and growth of the diamond, antenna-edge microwave plasma chemical vapor deposition (MPCVD) has been used as a bias enhanced nucleation step. Subsequently, the diamond growth step is performed using conventional MPCVD in a <0 0 1> fast growth mode. Scanning electron microscope (SEM) observation and reflection high-energy electron diffraction (RHEED) reveals the epitaxial ordering of deposited film in several millimeters square area. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：1277 / 1280

页数：4

共 9 条

[1] Epitaxial growth of diamond on iridium [J].

Ohtsuka, K ;

Suzuki, K ;

Sawabe, A ;

Inuzuka, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1996, 35 (8B) :L1072-L1074

[2] Fabrication of epitaxial diamond thin film on iridium [J].

Oiitsuka, K ;

Fukuda, H ;

Suzuki, K ;

Sawabe, A .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1997, 36 (9AB) :L1214-L1216

[3] Diamond/Ir/SrTiO3:: A material combination for improved heteroepitaxial diamond films [J].

Schreck, M ;

Roll, H ;

Stritzker, B .

APPLIED PHYSICS LETTERS, 1999, 74 (05) :650-652

[4] TEXTURED DIAMOND GROWTH ON (100) BETA-SIC VIA MICROWAVE PLASMA CHEMICAL VAPOR-DEPOSITION [J].

STONER, BR ;

GLASS, JT .

APPLIED PHYSICS LETTERS, 1992, 60 (06) :698-700

[5] Diamond deposition on a large-area substrate by plasma-assisted chemical vapor deposition using an antenna-type coaxial microwave plasma generator [J].

Taniyama, N ;

Kudo, M ;

Matsumoto, O ;

Kawarada, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2001, 40 (7A) :L698-L700

[6] Heteroepitaxial growth of diamond on an iridium (100) substrate using microwave plasma-assisted chemical vapor deposition [J].

Tsubota, T ;

Ohta, M ;

Kusakabe, K ;

Morooka, S ;

Watanabe, M ;

Maeda, H .

[7] High-performance diamond metal-semiconductor field-effect transistor with 1 μm gate length [J].

Umezawa, H ;

Tsugawa, K ;

Yamanaka, S ;

Takeuchi, D ;

Okushi, H ;

Kawarda, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1999, 38 (11A) :L1222-L1224

[8] Cu/CaF2/diamond metal-insulator-semiconductor field-effect transistor utilizing self-aligned gate fabrication process [J].

Umezawa, H ;

Taniuchi, H ;

Arima, T ;

Tachiki, M ;

Tsugawa, K ;

Yamanaka, S ;

Takeuchi, D ;

Okushi, H ;

Kawarada, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2000, 39 (9AB) :L908-L910

[9] GENERATION OF DIAMOND NUCLEI BY ELECTRIC-FIELD IN PLASMA CHEMICAL VAPOR-DEPOSITION [J].

YUGO, S ;

KANAI, T ;

KIMURA, T ;

MUTO, T .

APPLIED PHYSICS LETTERS, 1991, 58 (10) :1036-1038

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