Effect of interface states on the dc characteristics of short channel metal-semiconductor field effect transistor

被引：4

作者：

Majumdar, L ^{[1
]}

Chattopadhyay, P ^{[1
]}

机构：

[1] UNIV CALCUTTA,UNIV COLL SCI,DEPT ELECT SCI,CALCUTTA 700009,W BENGAL,INDIA

来源：

APPLIED SURFACE SCIENCE | 1997年 / 119卷 / 3-4期

关键词：

D O I：

10.1016/S0169-4332(97)00215-8

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The short channel effect in a MESFET structure has been studied taking into consideration the effect of interface states and the presence of a residual oxide layer at the interface. The study reveals a considerable effect of interface states on the de channel current and saturation transconductance of the device. The expression for saturation transconductance derived in this work shows explicit dependences on interfacial parameters unlike the conventional expression frequently used for simulation. It is shown that the characteristics are limited by pinning caused by the high density of interface states. (C) 1997 Elsevier Science B.V.

引用

页码：369 / 373

页数：5

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