MODELING SUBMICROMETER GAAS-MESFETS USING PISCES WITH AN APPARENT GATE-LENGTH-DEPENDENT VELOCITY-FIELD RELATION

An empirical velocity-field relationship, based on Monte Carlo simulation, is integrated into the PISCES drift-diffusion simulation program in order to analyze short-gate GaAs MESFET's. The current-voltage characteristics are compared with 2D Monte Carlo simulation results on a 0.2-mu-m gate length, and with measured I-V characteristics of a 0.32-mu-m gate-length GaAs MESFET. The comparison and the analysis made support the accuracy of the modified drift-diffusion model and makes it computationally efficient for simulation of short-gate devices.