A SUGGESTED METHOD FOR THE DETERMINATION OF THE CHARGE-DENSITY IN THE INTERFACIAL LAYER OF A SCHOTTKY-BARRIER MIS DIODE

被引：1

作者：

DAW, AN

DATTA, AK

ASH, MC

机构：

来源：

SOLID-STATE ELECTRONICS | 1984年 / 27卷 / 04期

关键词：

D O I：

10.1016/0038-1101(84)90174-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：393 / 393

页数：1

共 9 条

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[5]

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LUE, JT .

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[7] CHARACTERISTICS OF MOS SOLAR-CELLS BUILT ON (NORMAL-TYPE) INP SUBSTRATES [J].

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[8]

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[9] INP SCHOTTKY CONTACTS WITH INCREASED BARRIER HEIGHT [J].

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