Identification of the microscopic structure of new hot carrier damage centers in short channel MOSFETs

被引：6

作者：

Billman, CA ^{[1
]}

Lenahan, PM ^{[1
]}

Weber, W ^{[1
]}

机构：

[1] SIEMENS CORP RES & DEV, D-81739 MUNICH, GERMANY

来源：

MICROELECTRONIC ENGINEERING | 1997年 / 36卷 / 1-4期

关键词：

D O I：

10.1016/S0167-9317(97)00062-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We show, for the first time, that E' centers can be generated in hot hole stressing of short channel metal oxide silicon field effect transistors (MOSFETs). Prior to this study only P(b) centers had been directly linked to this stressing phenomena.

引用

页码：271 / 274

页数：4

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