X-ray study of strain and composition of Si/Ge0.85Si0.15 (111) islands grown in Volmer-Weber mode

被引：4

作者：

Malachias, A

Magalhaes-Paniago, R

Kycia, S

Cahill, DG

机构：

[1] Univ Fed Minas Gerais, Dept Fis, BR-30123970 Belo Horizonte, MG, Brazil

[2] European Synchrotron Radiat Facil, F-38043 Grenoble, France

[3] Lab Nacl Luz Sincrotron, BR-13084971 Sao Paulo, Brazil

[4] Univ Illinois, Dept Mat Sci, Urbana, IL 61801 USA

[5] Univ Illinois, Mat Res Lab, Urbana, IL 61801 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2004年 / 96卷 / 06期

关键词：

D O I：

10.1063/1.1777396

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Si islands were grown on Ge (111) in Volmer-Weber growth mode with a 40-nm thick Ge0.85Si0.15 buffer. The state of strain and chemical composition of these islands were evaluate by grazing incidence anomalous x-ray diffraction. The results show evidence of lattice coherence and Ge-Si intermixing. A direct relationship between increase in substrate temperature and enhancement of alloying was found, evidencing the importance of atomic interdiffusion in this growth mode. (C) 2004 American Institute of Physics.

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页码：3234 / 3238

页数：5

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