Mechanism of cleaning Si(100) surface using Sr or SrO for the growth of crystalline SrTiO3 films

被引：98

作者：

Wei, Y ^{[1
]}

Hu, XM ^{[1
]}

Liang, Y ^{[1
]}

Jordan, DC ^{[1
]}

Craigo, B ^{[1
]}

Droopad, R ^{[1
]}

Yu, Z ^{[1
]}

Demkov, A ^{[1
]}

Edwards, JL ^{[1
]}

Ooms, WJ ^{[1
]}

机构：

[1] Motorola Inc, Motorola Labs, Phys Sci Res Lab, Tempe, AZ 85284 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2002年 / 20卷 / 04期

关键词：

D O I：

10.1116/1.1491547

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A method for removing SiO2 and producing an ordered Si(100) surface using Sr or SrO has been developed. In this technique, a few monolayers of Sr or SrO are deposited onto the as-received Si(100) wafer in an ultrahigh vacuum molecular-beam epitaxy system. The substrate is then heated to similar to800 degreesC for about 5 min, the SiO2 is removed to leave behind a Sr- or SrO-terminated ordered Si(100) surface. This' Sr- or SrO-terminated Si(100) surface is well suited for the growth of crystalline high-k dielectric SrTiO3 films. Temperature programmed desorption measurements were carried out to understand the mechanism of removing SiO2 from Si(100) using Sr or SrO. The species we observed coming off the surface during the temperature cycle were mainly SiO and O, no significant amount of Sr. containing species was observed. We conclude that the SiO2 removal is due to the catalytic reaction SiO2 + Sr(or SrO) --> SiO(g) + O + Sr(or SrO). The reaction SiO, + Si --> 2SiO(g) at the SiO2/Si interface is limited and the pit formation is suppressed. The main roles that Sr or SrO play during the oxide removal process are catalysts promoting SiO formation and passivating the newly exposed Si surface, preventing further etching and the formation of pits in the substrate. (C) 2002 American Vacuum Society.

引用

页码：1402 / 1405

页数：4

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