Relation between hydrogen and the generation of interface state precursors

被引：4

作者：

Sii, HK

Zhang, JF

Degraeve, R

Groeseneken, G

机构：

[1] Liverpool John Moores Univ, Sch Engn, Liverpool L3 3AF, Merseyside, England

[2] IMEC, B-3001 Louvain, Belgium

来源：

MICROELECTRONIC ENGINEERING | 1999年 / 48卷 / 1-4期

基金：

英国工程与自然科学研究理事会;

关键词：

D O I：

10.1016/S0167-9317(99)00355-X

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Plasma charging and electrical stresses create new interface state precursors, which accelerate the device degradation during the subsequent stress. This paper investigates the mechanism responsible for the precursor generation. The attention is focused on the roles played by the hydrogen species and the holes trapped in the oxide. The properties of the generated precursor are studied and:compared with those of precursors originally existed in the device.

引用

收藏

页码：135 / 138

页数：4

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