Improved high-temperature performance of 1.3-1.5-mu m InNAsP-InGaAsP quantum-well microdisk lasers

被引：24

作者：

Bi, WG ^{[1
]}

Ma, Y ^{[1
]}

Zhang, JP ^{[1
]}

Wang, LW ^{[1
]}

Ho, ST ^{[1
]}

Tu, CW ^{[1
]}

机构：

[1] NORTHWESTERN UNIV,INST TECHNOL,DEPT ELECT & COMP ENGN,EVANSTON,IL 60208

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1997年 / 9卷 / 08期

基金：

美国国家科学基金会;

关键词：

carrier leakage; characteristics temperature; InNAsP-InGaAsP quantum well; microdisk lasers; optical-fiber windows;

D O I：

10.1109/68.605503

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report for the first time lasing action in the InNAsP-InGaAsP material system. Dramatic improvement in lasing action in a microdisk cavity was observed at elevated temperature up to 70 degrees C, which is about 120 degrees C higher than that of InGaAs-InGaAsP microdisk. This resulted in the first optically pumped InNAsP-InGaAsP microdisk lasers capable of above room-temperature lasing, The improvement of lasing temperature can be attributed to a large conduction band offset between the quantum well and barriers in the InNAsP-InGaAsP material system.

引用

页码：1072 / 1074

页数：3

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