Nanoscale Pit Formation at 2D Ge Layers on Si: Influence of Energy and Entropy

被引：9

作者：

Romanyuk, Konstantin ^{[1
,2
]}

Brona, Jacek ^{[1
,2
,3
]}

Voigtlaender, Bert ^{[1
,2
]}

机构：

[1] Forschungszentrum Julich, Inst Bio & Nanosyst IBN3, D-52425 Julich, Germany

[2] Forschungszentrum Julich, JARA Fundamentals Future Informat Technol, D-52425 Julich, Germany

[3] Univ Wroclaw, Inst Expt Phys, PL-50204 Wroclaw, Poland

来源：

PHYSICAL REVIEW LETTERS | 2009年 / 103卷 / 09期

关键词：

THERMODYNAMICS; SURFACTANTS; ALLOYS; GROWTH;

D O I：

10.1103/PhysRevLett.103.096101

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The structural stability of two-dimensional (2D) SiGe nanostructures is studied by scanning tunneling microscopy. The formation of pits with a diameter of 2-30 nm in one atomic layer thick Ge stripes is observed. The unanticipated pit formation occurs due to an energetically driven motion of the Ge atoms out of the Ge stripe towards the Si terminated step edge followed by an entropy driven GeSi intermixing at the step edge. Using conditions where the pits coalesce results in the formation of freestanding 8 nm wide GeSi wires on Si(111).

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共 18 条

[1] LATTICE-RELAXATION AROUND SUBSTITUTIONAL DEFECTS IN SEMICONDUCTORS [J].

BECHSTEDT, F ;

HARRISON, WA .

PHYSICAL REVIEW B, 1989, 39 (08) :5041-5050

[2] STRAIN-ENERGY AND STABILITY OF SI-GE COMPOUNDS, ALLOYS, AND SUPERLATTICES [J].

BERNARD, JE ;

ZUNGER, A .

PHYSICAL REVIEW B, 1991, 44 (04) :1663-1681

[3] SURFACTANTS IN EPITAXIAL-GROWTH [J].

COPEL, M ;

REUTER, MC ;

KAXIRAS, E ;

TROMP, RM .

PHYSICAL REVIEW LETTERS, 1989, 63 (06) :632-635

[4] Lateral motion of SiGe islands driven by surface-mediated alloying [J].

Denker, U ;

Rastelli, A ;

Stoffel, M ;

Tersoff, J ;

Katsaros, G ;

Costantini, G ;

Kern, K ;

Jin-Phillipp, NY ;

Jesson, DE ;

Schmidt, OG .

PHYSICAL REVIEW LETTERS, 2005, 94 (21)

[5] INVESTIGATIONS BY SIMS OF THE BULK IMPURITY DIFFUSION OF GE IN SI [J].

DORNER, P ;

GUST, W ;

PREDEL, B ;

ROLL, U ;

LODDING, A ;

ODELIUS, H .

PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1984, 49 (04) :557-571

[6] EQUILIBRIUM SHAPE OF SI [J].

EAGLESHAM, DJ ;

WHITE, AE ;

FELDMAN, LC ;

MORIYA, N ;

JACOBSON, DC .

PHYSICAL REVIEW LETTERS, 1993, 70 (11) :1643-1646

[7] THERMODYNAMIC MODELING OF THE LOCAL ATOMIC ORDER IN AMORPHOUS-ALLOYS BASED ON SILICON AND GERMANIUM [J].

EFSTATHIADIS, H ;

SMITH, FW .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1994, 70 (03) :547-556

[8] Critical role of surface steps in the alloying of Ge on Si(001) [J].

Hannon, JB ;

Copel, M ;

Stumpf, R ;

Reuter, MC ;

Tromp, RM .

PHYSICAL REVIEW LETTERS, 2004, 92 (21) :216104-1

[9] SURFACTANTS - PERFECT HETEROEPITAXY OF GE ON SI(111) [J].

HORNVONHOEGEN, M .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1994, 59 (05) :503-515

[10] Nanowires and nanorings at the atomic level -: art. no. 096102 [J].

Kawamura, M ;

Paul, N ;

Cherepanov, V ;

Voigtländer, B .

PHYSICAL REVIEW LETTERS, 2003, 91 (09)